Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered

Yan, Zeng; Li, Xiaojin; Wang, Yanling; Sun, Yabin; Shi, Yanling; Guo, Ao; Hu, Shaojian; Chen, Shoumian; Zhao, Yuhang

doi:10.1016/j.microrel.2017.06.006

Cited by 4 publications

(3 citation statements)

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“…Note that a 128502-5 fraction of H species may be locked by the defects, resulting in a permanent degradation that cannot be recovered. [32] Furthermore, the recovery of pre-existing and generated gate insulator defects is a fast process that is depicted by hole detrapping when the stress voltage is withdrawn. Because the trap generation in gate insulator is negligible for thinner EOT device and lower V G−STR , the recovery due to ∆N OT is also excluded during NBTI recovery.…”

Section: Recovery Characteristicsmentioning

confidence: 99%

“…In order to assess the contribution of ∆V IT2 to overall recovery, an analytical model extrapolated from double interface reaction diffusion theory is used to calculate ∆V IT2 that is written as [32] ∆V…”

Section: Recovery Characteristicsmentioning

confidence: 99%

“…[33] ∆V IT0 is the total degradation before the recovery starts, and can be obtained by using the NBTI stress model. The empirical expression describing the fast recovery contribution of ∆V IT1 and ∆V HT are, respectively, proposed [32] as follows:…”

Section: Recovery Characteristicsmentioning

confidence: 99%

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Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process

Gong

Sun

et al. 2023

Chinese Phys. B

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Degradation induced by the negative bias temperature instability (NBTI) can be attributed to three mutually uncoupled physical mechanisms, which consist of the generation of interface traps (ΔV IT), hole trapping in pre-existing gate oxide defects (ΔV HT), and the generation of gate oxide defects (ΔV OT). In this work, the characteristic of NBTI for p-type MOSFET fabricated using a 28-nm high-k metal gate (HKMG) process has been thoroughly studied. The experimental results show that the degradation is enhanced at larger stress bias and higher temperature. The impact of three underlying subcomponents have been evaluated using the comprehensive models. It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress. Moreover, the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted. The operating lifetime dependence on stress bias and temperature has also been discussed. It is observed that NBTI lifetime significantly decreases as the stress increases. Furthermore, the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects have been used to explain the recovery mechanism after stress.

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Section: Recovery Characteristicsmentioning

confidence: 99%

Section: Recovery Characteristicsmentioning

confidence: 99%