Analytical Model for Calculating the Nonlinear Distortion in Silicon-Based Electro-Optic Mach–Zehnder Modulators

Gutiérrez, Ana María Vega; Brimont, A.; Herrera, J.; Aamer, M.; Thomson, Donald M.; Gardes, Frederic Y.; Reed, Graham T.; Fédéli, Jean-Marc; Sanchís, Pablo

doi:10.1109/jlt.2013.2286838

Cited by 30 publications

(17 citation statements)

References 35 publications

(30 reference statements)

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“…The parameter M = 8I (V DC )/I (V DC ) denotes the relative amplitude of the FH component with respect to the IMD3 component when v 0 = 1 V. It therefore can be utilized to evaluate the linearity of the ring modulator approximately. A widely used performance metric to reflect the modulation linearity is the carrier-to-distortion ratio (CDR) which varies with v 0 [20]. Therefore, the parameter M is actually equivalent to the CDR/2 at the certain driving level of v 0 = 1 V. A large M implies a weak IMD3 component relative to the FH component, and hence a high linearity.…”

Section: Theoretical Basis Of Linearizationmentioning

confidence: 99%

“…However, a carrier-depletion-based silicon Mach-Zehnder modulator (MZM) can be linearized by choosing proper operation point and phase shifter length. The principle behind is that the nonlinearity of the PN junction cancels that of the cosine-squared transfer function of the MZM [20]. An alternative solution is to cascade dual MZMs in parallel or in series so that nonlinearities of the two sub-MZMs counteract each other [21].…”

Section: Introductionmentioning

confidence: 99%

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Improving the Linearity of Silicon Ring Modulators by Manipulating the Photon Dynamics

Zhang

et al. 2020

IEEE Photonics J.

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We demonstrate that the linearity of silicon ring modulators can be improved significantly by manipulating the dynamics of photons in the cavity. A theoretically model is established to analyze the dependence of the modulation linearity on lifetime and wavelength of photons. By reducing Q factors of silicon ring modulators from 11000 to 5880 and tuning the operation wavelength, measured Spurious-Free Dynamic Ranges for the third-order intermodulation distortion are improved from 98.5 dB•Hz 2/3 to 104.3 dB•Hz 2/3 and from 90.6 dB•Hz 2/3 to 94.7 dB•Hz 2/3 at 1 GHz and 10 GHz, respectively.

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Section: Theoretical Basis Of Linearizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improving the Linearity of Silicon Ring Modulators by Manipulating the Photon Dynamics

Zhang

et al. 2020

IEEE Photonics J.

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“…In addition, the optical switches, and optical modulators play an indispensable role in wavelength division multiplexing (WDM) technology which serves as an important component of optical add-drop multiplexer (OADM) and optical cross-connection (OXC) applications [9], [10]. Mach-Zehnder interferometer (MZI)-type electrooptic (EO) modulators have been widely implemented in optical fiber communication systems and optical signalprocessing systems [11]- [13]. An increasing number of studies have been devoted to improving the performance of MZI EO devices, such as transmission loss, driving voltage, and response speed.…”

Section: Introductionmentioning

confidence: 99%

On-Chip Electro-Optic Modulator With Loss Compensation Based on Polymeric Active-Integrated Waveguides

Zhang

Wang

2020

IEEE Access

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In this paper, an on-chip electro-optic (EO) modulator with loss compensation based on polymeric active-integrated waveguides was demonstrated. An erbium-doped waveguide amplifier was investigated and integrated with the EO modulator to compensate for signal loss. Polymeric active-integrated waveguides were based on the Mach-Zehnder interferometer structure, which consists of an amplified waveguide formed by two symmetric Y-junction branches and an EO waveguide formed by two decoupled waveguide arms. The dimensions of the polymeric active-integrated waveguides and the modulator were carefully designed and simulated. Moreover, a six-level spectroscopic model pumped at 980 nm was presented. The rate equations and propagation equations were solved, and the gain characteristics were simulated. The internal gain of 4.65 dB was achieved when the signal power was 0.1 mW at 1550 nm, the pump power was 100 mW at 980 nm, the Er 3+ concentration was 9.3×10 25 /m 3 , and the Yb 3+ concentration was 8.6×10 26 /m 3 in one Y-junction branch with a length of 1.5 cm. With the integrated waveguide amplifier, the loss of the EO modulator can be compensated at 9.3 dB in the two symmetric Y-junction branches. The light output intensity was also statistically presented. The proposed device with active-integrated waveguides could be used in polymer-based photonics integrated circuits. INDEX TERMS Integrated optics, electro-optic modulator, waveguide amplifier, polymer waveguides.

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“…These components also contribute to APL nonlinearities but generally their contributions are much smaller compared to that of the modulation devices [MAR09] and, hence, most of the time can be neglected. It can be pointed now that, the aim of this section is to demonstrate the potential and wide capability design that provides you having closed equations for the calculation of the distortion and demonstrate the accuracy of the model with experimental results [GUT13B].…”

Section: Analytical Model For Silicon-based Mzis Nonlinear Distortionmentioning

confidence: 99%

“…For these reasons, an analytical model to obtain distortion closed expressions of the most widely used modulator structure that is the Mach-Zehnder Interferometer (MZI), is theoretically developed and experimentally validated in the section 3.2. Further, the model allows the designer to set a proper choice of modulator parameters to linearize the device or to enhance the nonlinearities giving a potential tool to predict the nonlinear modulator performance and the parameters needed for a full study of a microwave photonic link [GUT13B].…”

Section: Introduction: Microwave Photonicsmentioning

confidence: 99%

Development of integrated silicon photonics modulation devices for digital and analog applications

Campo¹,

María²

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Silicon photonics is one of the most exciting and fastest growing photonic technologies in recent years. The salient feature of this technology is its compatibility with the mature silicon IC manufacturing based on complementary metal-oxide semiconductor (CMOS) processes widely used in microelectronic industry. Another motivation is the availability of high-quality silicon-on-insulator (SOI) planar waveguide circuits that offer strong optical confinement due to the high index contrast between silicon (n=3.45) and SiO 2 (n=1.45). This opens up miniaturization and very large scale integration of photonic devices allowing photonic integrated circuits for a wide range of applications and markets, from optical telecommunications to bio-photonic devices or precise fibre sensors. Optical modulators are key building-blocks for high speed signal transmission and information processing in any photonic interconnection solution. The work developed in this thesis, as part of the objectives of the European project HELIOS in which it is framed, is essentially focused on realizing compact and efficient modulators integrated on silicon chips. The thesis consists of three main chapters as well as the concluding section on the work accomplished. Chapter one is aimed at giving a general description of the benefits of using silicon photonics, showing its challenges and opportunities as well as at giving a deeply overview of all issues related to the electro-optic modulation. Chapter two is devoted to develop silicon modulators with high features for digital applications. Specifically, new optical structures different to the conventional ones are presented with the aim of enhancing the modulation performance or at least several critical parameters in the modulation. Chapter three is dedicated to the analog applications. The concept of microwave photonics is described as well as different researches carried out in the analog scope for application in the field of integrated microwave photonics, all of them using CMOS-compatible electro-optic silicon modulators which validate the potential of silicon photonics as a promising approach for enabling the development of integrated microwave photonics applications. Finally, conclusions on the work realized are provided in Chapter 4.

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Analytical Model for Calculating the Nonlinear Distortion in Silicon-Based Electro-Optic Mach–Zehnder Modulators

Cited by 30 publications

References 35 publications

Improving the Linearity of Silicon Ring Modulators by Manipulating the Photon Dynamics

Improving the Linearity of Silicon Ring Modulators by Manipulating the Photon Dynamics

On-Chip Electro-Optic Modulator With Loss Compensation Based on Polymeric Active-Integrated Waveguides

Development of integrated silicon photonics modulation devices for digital and analog applications

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