Analytical Model for Frequency Response of a Gunn Diode in Transit Time Modeand Application for Gallium Nitride Based Diodes

Abstract

Gunn oscillation can occur via the transferred electron effect or the negative differential mass effect. We have mathematically formulated the frequency response of a Gunn diode operating in the transit time mode independent of the mechanism responsible for Gunn oscillation in bulk semiconductors. Domain growth dynamics with space and time, variation of domain velocity, and frequency response have been simulated for Gallium Nitride (GaN) by using our mathematical equations. Our simulation shows that gallium nitride based Gunn diodes at an active length of 5 micrometer can produce frequency around 40 GHz for DC biasing 150 V.