Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

Saeidmanesh, Mehdi; Rahmani, Meisam; Karimi, Hamid; Khaledian, Mohsen; Ismail, Razali

doi:10.1016/j.microrel.2013.08.003

Cited by 8 publications

(5 citation statements)

References 26 publications

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“…promising potential of nanomaterials, and could provide valuable data for further theoretical modeling and experimental works on nano-scale systems. [32][33][34][35][36][37][38][39][40][41][42]…”

Section: Resultsmentioning

confidence: 99%

Investigation of Boron Nitro Silicone Band Modulation Using the Tight-Binding Method

Ahani

Ahmadi

Abazari

et al. 2022

ECS J. Solid State Sci. Technol.

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Boron nitro silicone (Si2BN), as a 2D material, is widely used due to its outstanding electrical properties. The electrical parameters of Si2BN must be defined and engineered precisely to improve device performance. This paper investigates the band structure and effective parameters of Si2BN using the tight binding approach. The unit cell including 4 atoms is considered for monolayer structure and the Schrodinger equation is calculated to obtain the energy levels. The effect of hopping energy on Si2BN band structure is also studied considering the conduction and valence bands. It is demonstrated that the distance between conduction and valance bands can be modified using the effect of lattice constant variation. The obtained results show that the nature of matter changes with fluctuating hopping energy of Si2BN. Alteration of the material properties can be explained in the form of applied perpendicular electric field to the Si2BN surface or strain and stress effects. The overlap energy variation in the form of band gap modulation is also explored and it is concluded that the band gap is decreased by strengthening of Silicon–Boron interaction. This research emphasized that obtained results are now suitable for being employed in different applications of nanoelectronics.

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Section: Resultsmentioning

confidence: 99%

Investigation of Boron Nitro Silicone Band Modulation Using the Tight-Binding Method

Ahani

Ahmadi

Abazari

et al. 2022

ECS J. Solid State Sci. Technol.

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“…

where a cc is the distance between adjacent carbon atoms, t is the hopping energy and T is the temperature. Using the common Poisson’s equation the potential distribution,

, for any point ( x , y ) of channel is given by [ 33 , 39 , 40 , 41 ]

where

is the dielectric constant of GNS; q is the electron charge; N D [in cm −3 ] is the doping concentration and

is the intrinsic carrier concentration where n is the 2D carrier concentration of GNS, so

…”

Section: Analytical Modelingmentioning

confidence: 99%

“…In the previously reported works, the electrical transport characteristics of nanoscale FETs have been investigated [ 33 , 34 , 35 , 36 , 37 , 38 ]. Analytical models for threshold voltage and subthreshold behavior of double gate bilayer graphene FET have been explored [ 33 ]. The current developments and future prospects for 2D materials-based nanoscale tunneling FETs have been studied [ 34 ].…”

Section: Introductionmentioning

confidence: 99%

A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS

2023

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Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronics properties, is a suitable candidate for transistor and sensor applications. In this research, the electrical transport characteristics of high-performance field effect transistors based on graphene nanoscroll are studied in the framework of analytical modeling. To this end, the characterization of the proposed device is investigated by applying the analytical models of carrier concentration, quantum capacitance, surface potential, threshold voltage, subthreshold slope and drain induced barrier lowering. The analytical modeling starts with deriving carrier concentration and surface potential is modeled by adopting the model of quantum capacitance. The effects of quantum capacitance, oxide thickness, channel length, doping concentration, temperature and voltage are also taken into account in the proposed analytical models. To investigate the performance of the device, the current-voltage characteristics are also determined with respect to the carrier density and its kinetic energy. According to the obtained results, the surface potential value of front gate is higher than that of back side. It is noteworthy that channel length affects the position of minimum surface potential. The surface potential increases by increasing the drain-source voltage. The minimum potential increases as the value of quantum capacitance increases. Additionally, the minimum potential is symmetric for the symmetric structure (Vfg = Vbg). In addition, the threshold voltage increases by increasing the carrier concentration, temperature and oxide thickness. It is observable that the subthreshold slope gets closer to the ideal value of 60 mV/dec as the channel length increases. As oxide thickness increases the subthreshold slope also increases. For thinner gate oxide, the gate capacitance is larger while the gate has better control over the channel. The analytical results demonstrate a rational agreement with existing data in terms of trends and values.

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“…This research demonstrates the hopeful potential of nanomaterials in applications of nanoscale systems, and could offer helpful information for further theoretical modeling and simulation on nanomaterial-based devices such as nanotransistors and nanosensors. [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50]…”

Section: H H H H H H H H H Hmentioning

confidence: 99%

Investigation of Bond Energy Effect on the Electronic Band Structure of Penta-Graphene using Tight-Binding Method

Ahmadi¹,

Balkanloo²,

Rahmani³

et al. 2022

ECS J. Solid State Sci. Technol.

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Graphene is a semiconductor with zero band-gap, meaning that the energy difference between the valence band and conduction band is zero. This characteristic is not a good feature for making electronic devices such as transistors and sensors. Therefore, by changing the structure of graphene, a new sample of graphene as “penta graphene” with a non-zero band-gap can be obtained. Penta graphene as a new and stable carbon allotrope is stronger than graphene. It is a nonconductor material in which the transfer of electrons from the valence band to the conduction band is very low. In this research, an attempt has been made by solving the Schrödinger equation for two bond energies t and tp and finally by equating these two energies in the equation, two bands of valence and conduction in penta graphene meet at two points and there is an overlap in this case. Considering the real part of the roots and regardless of their imaginary part, the diagrams of energy E as a function of wave vector k can be obtained for different amounts of bond energy. The results demonstrate that by increasing the value of t, the band gap decreases and there is an overlap between the conduction and valance bands.

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Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

Cited by 8 publications

References 26 publications

Investigation of Boron Nitro Silicone Band Modulation Using the Tight-Binding Method

Investigation of Boron Nitro Silicone Band Modulation Using the Tight-Binding Method

A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS

Investigation of Bond Energy Effect on the Electronic Band Structure of Penta-Graphene using Tight-Binding Method

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