Analytical Model of the Schottky Contact Coplanar Line

Seguinot, C.; Kennis, P.; Pribetich, P.; Legier, Jean-François

doi:10.1109/euma.1984.333351

Cited by 13 publications

(2 citation statements)

References 11 publications

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“…2. In most previous work on studying MIS structures (e.g., see [6]- [17]), semiconductor substrates were described by a uniform conductivity model in which the semiconductor is treated as a uniform lossy material and the electrical property of the semiconductor is characterized by its conductivity and dielectric constant. Using such a uniform conductivity model [3], [25], the propagation factor can be readily obtained as a complex value , which provides a close approximation to the actual result attained using the device-level simulation.…”

Section: Atmentioning

confidence: 99%

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Device-level simulation of wave propagation along metal-insulator-semiconductor interconnects

Wang

Dutton²,

Rafferty³

2002

IEEE Trans. Microwave Theory Techn.

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A device-level simulation is presented for studying wave propagation along metal-insulator-semiconductor interconnects. A set of nonlinear equations is first formulated by combining the motion equations of charged carriers and Maxwell's equations. The set of nonlinear equations is then transformed into the frequency domain, which leads to sets of nonlinear equations for the fundamental mode and its harmonics. Finally, the sets of nonlinear equations in the frequency domain are discretized using the finite-element method and solved using Newton's iterations. Special numerical enhancements are implemented to speed up the computational convergence and handle the boundary layer nature of the problem under study. This device-level simulation provides knowledge on field-carrier interactions, semiconductor substrate loss, and nonlinearity, as well as slow-wave and screening effects of charged carriers. This device-level simulation scheme enables a rigorous full-wave study of nonlinearity effects that arise from semiconductor substrates. Numerical examples for some practical material and geometrical parameters are included to illustrate capabilities and efficiency of the proposed device-level simulation scheme.

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Section: Atmentioning

confidence: 99%

“…Analytical or empirical lumped-circuit models [6], [7] were used to provide fast calculation and firsthand insight to the performance of MIS interconnects. However, they are applicable to a few simplified configurations only and provide very limited information about the distributed nature of MIS interconnects.…”

Section: Introductionmentioning

confidence: 99%