Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

Pal, Praveen; Pratap, Yogesh; Gupta, Mridula

doi:10.1109/jsen.2021.3069243

Cited by 12 publications

(6 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When a pH sample comes in contact with the sensing surface it will protonate or deprotonate the surface altering the interface charge density according to the pH value. The acidic pH will protonate the surface while the basic pH will deprotonate the surface and consequently increase or decrease of 2DEG in the channel to increase or decrease the drain current which can be used as a sensing metric [115]- [117]. Similarly, if reference electrode system is used the protonation or deprotonation will result in negative or positive shift in threshold voltage which can be another sensing metric.…”

Section: Simulation and Modeling Methodologies For Biosensorsmentioning

confidence: 99%

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

Bhat

Poonia

Varghese

et al. 2023

Micro and Nanostructures

View full text Add to dashboard Cite

Section: Simulation and Modeling Methodologies For Biosensorsmentioning

confidence: 99%

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

Bhat

Poonia

Varghese

et al. 2023

Micro and Nanostructures

View full text Add to dashboard Cite

“…Further, researchers were emphasized on MOSHEMT for biosensor applications. A limited number of analytical and simulation works were reported on AlGaN/GaN MOSHEMT to detect neutral biomolecules [20][21][22][23], PSA in human serum [24], and the pH of different electrolyte solutions [25]. With the aid of a charge control-based model, sensitivity analysis of a fabricated AlGaN/AlN/GaN MOSHEMT has been carried out with a focus on its biosensing capability to find an equivalent charge due to multiple bioanalytes that are commonly used biomarkers for aggressive diseases like kidney damage, breast cancer, prostate cancer, etc [26].…”

Section: Introductionmentioning

confidence: 99%

Device optimization and sensitivity analysis of a double-cavity graded MgZnO/ZnO MOSHEMT for biomolecule detection

Pandey,

Dwivedi

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

The detailed analytical model of biosensing parameters are proposed for a double-cavity graded MgZnO/ZnO metal oxide semiconductor high electron mobility transistor (MOSHEMT) with cap layer-based biosensor including transfer characteristic, output characteristic, change in cut-off voltage (ΔVoff), transconductance (gm), sensitivity, and selectivity. A thorough investigation of dielectric modulation in a double nanogap cavity under the gate was conducted with a focus on improving the sensing characteristics of a MOSHEMT to indicate the presence of biomolecules like Uricase, Streptavidin, Protein, and ChOx. The dielectric modulation and the Poisson equation were used to determine the effective capacitance and cut-off voltage in the cavity region. Consequently, the changes in the cut-off voltage and the drain current of the device were used as the sensing metrics for the detection of biomolecules in the cavity regions. It was found that the proposed graded MgZnO/ZnO MOSHEMT-based biosensor demonstrates a higher change in cut-off voltage and drain current in comparison to the previous works, suggesting higher sensitivity for biomolecules.

show abstract

“…Hence, careful measures need to be taken on defect generation during the process steps. The suitability of HEMT as a biosensor arises from its intrinsic properties of enhanced electron mobility, 2-dimensional electron gas (2-DEG), chemical inertness, thermal stability, and high speed [10][11][12][13][14]. HEMT also finds use in power devices [15], [16] including amplifier designs [17].…”

Section: Introductionmentioning

confidence: 99%

Sensitivity estimation of biosensor in a tapered cavity MOSHEMT

Dastidar,

Patra,

Mohapatra

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

The present research provides a comprehensive investigation of the structural modification at the cavity under the gate (CUG) on the metal oxide semiconductor high electron mobility transistor (MOSHEMT)-based biosensor by projecting its basic figures of merit (FOMs). The effect of a tapering dielectric on the sensitivity of the biosensor has not been extensively investigated in many research efforts. Therefore, to account for the larger binding surface, the current study considers a wide range of permittivity of the biomolecules from 1 to 10, using the dielectric modulation technique in the tapered cavity. Various cavities are analysed to enhance the sensitivity. The findings indicate that the presence of biomolecules causes a considerable fluctuation in the drain current, threshold voltage, on-current, off-current, channel potential, and oxide capacitance. It has also been estimated how various fill percentages and charged and neutral biomolecules affect the device's sensitivity. The tapered dielectric MOSHEMT offered an on-current sensitivity and threshold voltage sensitivity of 1.25 and 0.889 for neutral biomolecule (k = 8) and 0.562 and 2.23 for positively charged biomolecule respectively. Thus, tapering of the oxide does offer better sensitivities that can be exploited for biosensing applications.

show abstract

Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

Cited by 12 publications

References 44 publications

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

Device optimization and sensitivity analysis of a double-cavity graded MgZnO/ZnO MOSHEMT for biomolecule detection

Sensitivity estimation of biosensor in a tapered cavity MOSHEMT

Contact Info

Product

Resources

About