Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Abstract

In this paper we have developed an analytical model for Ferro PZT Al 2 O 3 /AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrödinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (n s ), threshold voltage (V th ), drain current (I ds ), gate capacitance (C gs and C gd ), and unit gain cut-off frequency(f T ) model equations are generated and simulated with MATLAB tool. It is also observed that the insertion of the Ferro Pb(Zr, Ti)O 3 PZT (lead zirconium titanate) material can also improve the device performance. The proposed Ferro PZT MOSHEMT model accurately produces a higher drain current of 1.14A/mm , a high transconductance of 362S/mm, the gate-to-source capacitance of 50.99pF, the gate-to-drain capacitance of 38.25pF, and high cut-off frequency of 0.033THz for 20nm AlGaN barrier layer. The proposed model results show good agreement with the TCAD-Atlas simulation results and were satisfactory for the different AlGaN barrier layer thickness. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.

Sensitivity estimation of biosensor in a tapered cavity MOSHEMT

“…Increasing the efficiency of the device can be further extended as it is possible to scale down the MOSHEMT structure. Despite the MOSHEMT devices being plagued by issues of elevated contact resistance due to the use of metallic contacts and enhanced on-resistance arising from the junction spacing [5], reports of achieving a higher frequency of operation GHz to THz range has been seen in [6][7][8].Even, the use of different insulators and high-dielectric (high-κ) materials helps in overcoming the gate leakage. Again, defects are inherent at the high voltage in the barrier and near the gate border resulting in reduction of gate current.…”