Analytical modeling of a high-K underlap dielectric- and charge-modulated silicon-on-nothing FET-based biosensor

Singh, Khuraijam Nelson; Dutta, Pradip

doi:10.1007/s10825-020-01511-8

Cited by 16 publications

(3 citation statements)

References 34 publications

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“…Comparing the sensitivity of TSG-GSM-SGCB with the similar existing biosensors [55][56][57][58][59] necessitates the need of a common figure-of-merit. Relative change in threshold voltage is an effective figure-of-merit that helps to understand that which existing configuration offers the highest sensitivity.…”

Section: Resultsmentioning

confidence: 99%

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, channel potential, drain current and sub threshold swing. The sensitivity variation in the biosensor has been thoroughly studied by varying different device parameters to investigate its biosensing performance. Graded doping in channel offers enhanced sensitivity than a non‐graded doped channel when the doping of the channel is more near the drain end than source end which is due to stronger electric field and gate capacitance. Effect of fill‐in factor for different biomolecules on the sensitivity has been thoroughly discussed. Different analytical results show an excellent agreement with the simulations done on SILVACO ATLAS TCAD simulator.

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Section: Resultsmentioning

confidence: 99%

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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“…The ϕs,min is equal to the threshold potential (ϕth) because ϕth is the minimum potential at which surface carrier density get inverted. The A and B factors are determined from (32)-(34) by using boundary conditions described in (16)- (17) and (21)- (24) respectively. The calculated value of A and B are given below:…”

Section: Formulation Of Surface Potentialmentioning

confidence: 99%

Analysis of Underlap Strained Silicon on Insulator MOSFET for Accurate and Compact Modeling

Sharma

Rana

Kaushal

et al. 2021

Preprint

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Recently, transistors with an underlapped gate structure have been widely studied to overcome several challenges associated with nanoscale devices. In this work, underlap region is incorporated at source and drain (S/D) ends in a fully depleted Strained Silicon On Insulator (SSOI) device, with high-k dielectric material in the spacer region. The S/D underlapped region helps to reduce the leakage current and can be particularly useful for low power applications. However, increased underlap length degrades the ON current significantly. We show that this issue can be mitigated via the inclusion of a high-k spacer, which improves the ON current by enhancing the gate controllability over the S/D underlap channel region. It helps to achieve the essential requirement low power applications i.e. the high ON/OFF current ratio at extremely low value of leakage current. The strained silicon material is used in the channel region to further improve the ON current. A compact threshold voltage model is developed for the proposed device (underlap-SSOI) while maintaining the accuracy at par with TCAD simulations. This threshold voltage model incorporates underlap length, strain-induced offsets and spacer dielectric constant. This device model may be used for circuit simulations.

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“…33 This underlap structure not only effectively mitigated the problem of structural instability but also demonstrated enhancements in the biosensor's binding probability and sensitivity. 33,34 In contrast to conventional nano-FET, the underlap gate-FET configuration involves substantial etching of the gate metal and oxide, creating the sensing area. This strategic alteration eliminates the predicament of the hovering gate electrode.…”

mentioning

confidence: 99%

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Yadav,

Das,

Rewari

2024

ECS J. Solid State Sci. Technol.

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This paper introduces a novel device called the gate all around engineered gallium nitride field effect transistor (GAAE-GANFET), designed specifically for label-free biosensing applications. This innovative gate-all-around engineering in GANFET integrates various device engineering techniques, such as channel engineering, gate engineering, and oxide engineering, to enhance biosensing performance. The channel engineering techniques refer to the use of a gallium nitride channel with a step-graded doping profile, divided into three distinct regions. In contrast, the gate engineering technique refers to the cylindrical split-gate-underlap architecture. The oxide engineering technique involves stacking Al2O3 and HfO2. Moreover, this biosensor incorporates two-sided gate underlap cavities that facilitate the immobilization of biomolecules. These open cavities not only provide structural stability but also simplify the fabrication process to a significant extent. The viability of this biosensor as a label-free biosensor has been evaluated using an antigen and an antibody from the Avian Influenza virus and DNA as the target biomolecules. The proposed analytical model and TCAD simulation results are in excellent agreement, demonstrating the reliability of the proposed device. Additionally, the biosensor's sensitivity, which depends on cavity length, doping concentration, gate metal work function, and temperature variation, has been thoroughly explored.

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Analytical modeling of a high-K underlap dielectric- and charge-modulated silicon-on-nothing FET-based biosensor

Cited by 16 publications

References 34 publications

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Analysis of Underlap Strained Silicon on Insulator MOSFET for Accurate and Compact Modeling

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

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