Analytical modeling of a high-performance near-ballistic uni-traveling-carrier photodiode at a 1.55-/spl mu/m wavelength

Wu, Yelin; Shi, J.-W.; Chiu, Pei-Chin

doi:10.1109/lpt.2006.873567

Cited by 50 publications

(28 citation statements)

References 11 publications

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“…There are two major factors limiting the bandwidth of our device; one is the internal carrier drift or lifetime, and the other is the RC time constant. Next, we use device-modeling techniques [9] to determine which one leads to the observed bandwidth enhancement and degradation under medium (6 V) and high (> 6 V) bias voltages. We utilize the measured microwave scattering parameters (S 11 ) to extract the RC-limited bandwidth, which is around 2 GHz and insensitive to the V CE bias (4-9 V).…”

Section: Measurement Resultsmentioning

confidence: 99%

Separate Absorption-Charge Multiplication Heterojunction Phototransistors With the Bandwidth-Enhancement Effect and Ultrahigh Gain-Bandwidth Product Under Near Avalanche Operation

Shi

Hong

et al. 2008

IEEE Electron Device Lett.

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We demonstrate a high-performance heterojunction phototransistor (HPT): separate absorption-charge multiplication HPT. The incorporation of an In 0.52 Al 0.48 Asbased multiplication layer in the In 0.53 Ga 0.47 As-based collector layer of our HPT allows for a great shortening of the trapping time (∼ns to ∼30 ps) of electrons at the base-emitter junction under near avalanche operation, without sacrificing the gain performance. The interaction between the photoconductive gain and avalanche gain means that it is not necessary to use high bias voltages (> 30 V) in our device to attain high-gain (> 1 × 10 4 ) performance. With this device design, we can achieve an extremely high (90 THz) gain-bandwidth product (1.6 GHz, 5.5 × 10 4 ) under a 6-V bias.

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Section: Measurement Resultsmentioning

confidence: 99%

Separate Absorption-Charge Multiplication Heterojunction Phototransistors With the Bandwidth-Enhancement Effect and Ultrahigh Gain-Bandwidth Product Under Near Avalanche Operation

Shi

Hong

et al. 2008

IEEE Electron Device Lett.

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“…However, during photodiode operation, photogenerated holes with slow drift velocity are always a major factor limiting speed. The 'slow' hole problem is eliminated in the InP-based UTC photodiode structure [ Normalized to spiral antenna output UTC (NBUTC) photodiodes [56][57][58][72][73][74], where only electrons with high drift velocity act as active carriers. Figure 6 shows conceptual band diagrams for p-i-n, UTC and NBUTC photodiodes.…”

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

“…This leads to a significant improvement in the effective carrier drift velocity of the photodiode during operation and excellent SCBP performance [28,70,71]. The major difference between the UTC photodiode and the NBUTC photodiode is the insertion of an additional p-type charge layer in the collector layer to control the distribution of the internal electrical field, which results in an over-shoot of the electron drift velocity even under high reverse bias voltage (-3 V) [56][57][58][71][72][73][74]. Figure 6(c) shows a conceptual band diagram for an NBUTC photodiode.…”

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

Millimeter-wave photonic wireless links for very high data rate communication

2011

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T he most useful wireless communication band is located in the frequency range of 0.3-3.5 GHz for reasons of compact antenna size, low propagation loss and good penetration through buildings [1]. However, wireless carrier frequencies are being pushed higher due to emerging high-bandwidth applications, which include next-generation smart cell phones [1] and wireless linking for three-dimensional super high-definition television [2]. As a result, the millimeter-wave (MMW) bands at 60 (V-band), 120 (D-band) and even higher than 300 GHz are beginning to attract attention due to their 'unlicensed' usage [2][3][4][5][6][7][8].Several key front-end components have been developed employing the already mature silicon-based complementary metal-oxide-semiconductor (CMOS) integrated-circuit (IC) technology for wireless communication in the V (50-75 GHz) and W (75-110 GHz) bands or even higher operating frequencies for wireless communication [9]. Recently, a 60 GHz CMOS transceiver module [10] and system comprised of antennas, 60 GHz power amplifiers, local oscillators and baseband ICs has been commercially developed by SiBEAM (USA). In addition, advanced InP-based high electron mobility transistors (InP-HEMTs) and heterojunction bipolar transistors have been used to develop some high-speed ICs and key components that operate at 125 GHz [11,12] or greater than 300 GHz [13,14] for >1 Gbit s -1 wireless communication systems.However, MMW signals suffer substantial propagation loss in free space [8]. This problem and their inherent straight-line path of propagation affect connections and synchronization between the different parts of the whole communication system [15]. A promising solution to overcome this problem is the radio-over-fiber (RoF) technique [3,4,16,17], in which the MMW local-oscillator signal and data are both distributed through a low-loss optical fiber and only radiated over the last mile to the end user. Figure 1 shows a schematic representation of this approach, illustrating the motivation and working principles of two MMW-over-fiber communication systems. Figure 1(a) shows the additional electrical-to-optical (E-O) and optical-to-electrical (O-E) conversion processes used in the central office and base station, respectively. The optical MMW signal is distributed remotely through a low-loss fiber from the central office to several base stations, effectively eliminating the huge propagation loss of the MMW signal that occurs in an electrical transmission line or free space.

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“…13b,d,e, the i-InP carrier collection layer can be replaced with a dopedInP in order to avoid the space charge effect, and to accelerate electrons by near-ballistic (NB) transport behavior [60,61]. The former is sometimes called as chargecompensated (CC) structure [62].…”

Section: Carrier Transport Designmentioning

confidence: 99%

High‐power RF photodiodes and their applications

Nagatsuma

Itô

Ishibashi

2009

Laser & Photonics Reviews

155

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There has been an increasing interest in photonic generation of RF signals in the millimeter-wave (30 GHz ∼ 300 GHz) and/or terahertz-wave (0.1 THz ∼ 10 THz) regions, and photodiodes play a key role in it. This paper reviews recent progress in the high-power RF photodiodes such as UniTraveling-Carrier-Photodiodes (UTC-PDs), which operate at these frequencies. Several approaches to increasing both the bandwidth and output power of photodiodes are discussed, and promising applications to broadband wireless communications and spectroscopic sensing are described.Photodiode chip is bonded to the substrate with the antenna. This is a symbolic figure of RF photonics in this article. Antenna Photodiode Light RF signal

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Analytical modeling of a high-performance near-ballistic uni-traveling-carrier photodiode at a 1.55-/spl mu/m wavelength

Cited by 50 publications

References 11 publications

Separate Absorption-Charge Multiplication Heterojunction Phototransistors With the Bandwidth-Enhancement Effect and Ultrahigh Gain-Bandwidth Product Under Near Avalanche Operation

Separate Absorption-Charge Multiplication Heterojunction Phototransistors With the Bandwidth-Enhancement Effect and Ultrahigh Gain-Bandwidth Product Under Near Avalanche Operation

Millimeter-wave photonic wireless links for very high data rate communication

High‐power RF photodiodes and their applications

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