Analytical modeling of AlGaN/GaN/InGaN High Electron Mobility Transistors (HEMTs) through polarization effects

Abstract

High Electron Mobility Transistors (HEMTs) are high frequency hetero-junction transistors used for various high-power applications like RF, radiation, space etc. AlGaN/GaN HEMTs form Two-Dimensional Electron Gas (2DEG) when subject to stress between the junction of a wide bandgap and low bandgap material. It is essential to evaluated the