Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells

A novel widespread Matlab/Simulink based modeling of InGaN double hetero-junction p-i-n solar cell

“…To validate the Matlab/Simulink model, the obtained results have been compared to those previously found based on an analytical model developed by the same author [11]. Likewise, the same numerical results were matched to those experimentally obtained by [22].…”

“…It should be noted that the induced-polarization at the InGaN/GaN hetero-interface depends on the indium content in the InGaN epilayer and can be calculated using an ab initio model developed by Fiorentini et al [11,16]. Definitely, due to charge spreading at the vicinity of the interface, the polarization charges are distributed in a few atomic layers as thick as 1 nm [11,12], called W pz . Hereafter; we assume that the polarization charges can be described by a bulk charge density q pz such as:…”

“…Such a form of I s will be used as a basic equation in building our numerical model under Matlab/Simulink following Zhang et al [17,18] and Belghouthi et al [11,12]:…”

“…Within this work, we would apply a numerical model to a p-i-n structure consisting of a stack of 150 nm thick n-GaN, 200 nm thick In 0.12 Ga 0.88 N/GaN and 100 nm thick p-GaN layers. The study has been conducted considering AM1.5 conditions and using material parameters provided by Brown et al [21] and Rabeb et al [11].…”

“…However, practically, it is still doubtful to reach what has been estimated theoretically. This is due to numerous reasons such as the high indium (In) incorporation, the inadequate control during the epitaxial growth of thin films and the polarization effects [10][11][12].…”