Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs

Graef, Michael; Hain, Franziska; Hosenfeld, Fabian; Horst, Fabian; Farokhnejad, Atieh; Iñı́guez, Benjamı́n; Kloes, Alexander

doi:10.23919/mixdes.2017.8005168

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Rdf In Mosfets1

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Cited by 2 publications

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“…This connection is the reason for the rdf dependency. In a previous work [Graef et al, 2017] a method is developed for an rdf estimation in short-channel double-gate MOSFET devices. For MOSFETs, the current limiting attribute is the potential barrier within the channel region.…”

Section: Rdf In Mosfetsmentioning

confidence: 99%

Capturing Performance Limiting Effects in Tunnel-FETs

Graef¹,

Hosenfeld²,

Horst³

et al. 2018

CompoNano

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ABSTRACT. In this paper a two-dimensional analytical Tunnel-FET model is revised. It is used to evaluate performance enhancing measures for the TFET regarding device geometry and physical effects. The usage of hetero-junctions is discussed and a way to suppress the ambipolar behavior of the TFET is shown. In focus of this work are the emerging variability issues with this new type of device. Random-dopant-fluctuations (rdf) have a major influence on the device performance. This effect is analyzed and compared with rdf effects in a MOSFET device. The drawn conclusions lead to a re-evaluation of performance limiting aspects of fabricated TFET devices.

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Section: Rdf In Mosfetsmentioning

confidence: 99%