Analytical Modeling of Short-Channel TMD TFET Considering Effect of Fringing Field and 2-D Junctions Depletion Regions

Singh, Niraj Kumar; Sahoo, Manodipan

doi:10.1109/ted.2021.3135367

Cited by 6 publications

(9 citation statements)

References 28 publications

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“…It is noted that a smaller SS, larger I on , and larger I on /I off are preferred for both LP and HP devices. As shown in Figure 6, the OTFETs in general outperform both the TFETs based on inorganic 2D materials 32,33 and the cold-source FETs (CS-FETs) based on 2D MPc-COFs. 10 In particular, the doublelayer OTFET based on 2D NiPc/CuPc-COF is overall superior in terms of all three parameters.…”

Section: Otfetsmentioning

confidence: 94%

Toward Nanoscale Organic Tunnel Field-Effect Transistors with Small Subthreshold Swing and High On-State Current: A Computational Design Based on Two-Dimensional Covalent-Organic Frameworks

Li,

2024

ACS Appl. Nano Mater.

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We report a computational study on the possibility of designing nanoscale organic tunnel field-effect transistors (OTFETs) with a subthreshold swing (SS) much smaller than 60 mV/dec and on-state current (I on ) much larger than that of conventional organic field-effect transistors. The OTFETs are designed on the basis of two-dimensional metallophthalocyanine covalent-organic frameworks (2D MPc-COFs) by employing first-principles and quantum-transport approaches in the ballistic-transport regime. The designed OTFETs with architecture of the van der Waals heterojunction manifest themselves with SS as small as 21 mV/dec and I on as large as 887.5 μA/μm. These devices outperform most tunnel field-effect transistors reported in the literature and fulfill the IRDS (International Roadmap for Devices and Systems) requirement for both high-performance (HP) and low-power (LP) devices. We reveal that 2D MPc-COFs with moderate band gaps are highly required to optimize the device performance. This study provides an insight into the promising application of 2D COFs beyond conventional organic materials in the rational design of HP and LP nanoscale OTFETs.

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Section: Otfetsmentioning

confidence: 94%

Toward Nanoscale Organic Tunnel Field-Effect Transistors with Small Subthreshold Swing and High On-State Current: A Computational Design Based on Two-Dimensional Covalent-Organic Frameworks

Li,

2024

ACS Appl. Nano Mater.

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“…Atomistic simulators such as Nano TCAD ViDES is compatible for atomistics simulations of TMD devices but they suffer from computational complexity and it has its own limitations. Moreover, many recent work based 2-D materials FET have been using SILVACO TCAD for simulating FETs 18 , 47 . In SILVACO TCAD, while defining 2-D materials, the electrical properties of materials like permittivity, densitiy of states, electron and hole effective masses, affinity, electron and hole mobilities need to be defined.…”

Section: Modelling and Simulation Methodsmentioning

confidence: 99%

“…Negative and positive charge density ( to ) at the interface is considered to model the impact of charged biomolecules. Material parameters of the TMD materials have been extracted from 47 .…”

Section: Modelling and Simulation Methodsmentioning

confidence: 99%

“…For the simulation purpose, L 1 and L 2 are fixed at 35 nm and T bio is taken to be 6 nm for 66% filled cavity and 4 nm for 50% filled cavity and 2 nm for 33% filled cavity. The www.nature.com/scientificreports/ effect of partially filled cavities on the surface potential can be understood through (47) and (48). For different percentage filling of profiles ( 47) is fed to ( 24) and ( 25) for Device structure-1 and for Device structure-2 ( 48) is used and surface potential for partial filled cavity is calculated using (32) and (33).…”

Section: Sensitivity Analysis With the Variation In Thickness And Len...mentioning

confidence: 99%

“…Gate electrode fringing capacitance when the nano-cavity of region I and region III is partially filled upto a certain height ( T bio ) can be expressed as, Where where T bio is the height of biomolecules occupancy and ε bio is the dielectric constant of biomolecules. By substituting (47) in (24) and in (25) surface potential for partially cavity case can be obtained. For the proposed Device structure-2, effect of (48) will get added to (40) and from (32) and (33), surface potential for partially filled cavity case can be obtained.…”

Section: Surface Potential Modelling For Partially Filled Cavitymentioning

confidence: 99%

See 2 more Smart Citations

A detailed investigation of dielectric-modulated dual-gate TMD FET based label-free biosensor via analytical modelling

Kumari

Singh

Sahoo

2022

Sci Rep

Self Cite

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In this work, an analytical model is developed for DM-DG-TMD-FET- based Biosensor including Fringing-field effects. The Analytical model has been developed for two different Device structures, namely Device structure-1 (without a gate above the nano-cavity) and Device structure-2 (with a gate above the nano-cavity) based on modulation of the dielectric constant of biomolecules in the nano-cavity region. The proposed model has been validated against both numerical quantum simulation results with the help of a few fitting parameters and it also agrees with the 2-dimensional numeric simulator SILVACO TCAD used in this work. The presence/absence of biomolecules has been detected by the metric of threshold voltage sensitivity $$S_{Vth}$$ S Vth and drain current $$I_{d}$$ I d for the neutral as well as charged biomolecules. Sensitivities of partially filled nano-cavities arising out of steric hindrance in both the biosensors are compared. Optimization of device dimensions has also been included in this work to enhance the sensitivity of the biosensors. It has been witnessed that the sensitivity of the proposed biosensor is $$\sim$$ ∼ 100% higher in Device structure-1 for neutral biomolecules with dielectric constant $$\kappa$$ κ = 12, when compared to Device structure-2 for fully filled cavities. Whereas for the charged biomolecules, Device structure-1 shows $$\sim$$ ∼ 50% enhanced sensitivity than Device structure-2 for $$N_{f}=-1\times 10^{-12}$$ N f = - 1 × 10 - 12 $$\text{C}/\text{cm}^2$$ C / cm 2 . Device structure-1 demonstrates $$\sim$$ ∼ 120% higher sensitivity than Device structure-2 with partially filled cavities (i.e. 66% filled cavity). Finally, benchmarking of the proposed biosensor is presented with contemporary, state-of-the-art biosensors and it is highlighted that $$MoS_{2}$$ M o S 2 FET-based biosensor emerges with a superior sensitivity of $$S_{Vth}$$ S Vth = 0.81 V for $$\kappa = 12$$ κ = 12 .

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Spacer effects on the performance of MoTe2/MoSe2 and MoTe2/WSe2 heterostructure double gate MOSFET

Muthu Manjula,

Ramesh

2024

Micro and Nanostructures

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Analytical Modeling of Short-Channel TMD TFET Considering Effect of Fringing Field and 2-D Junctions Depletion Regions

Cited by 6 publications

References 28 publications

Toward Nanoscale Organic Tunnel Field-Effect Transistors with Small Subthreshold Swing and High On-State Current: A Computational Design Based on Two-Dimensional Covalent-Organic Frameworks

Toward Nanoscale Organic Tunnel Field-Effect Transistors with Small Subthreshold Swing and High On-State Current: A Computational Design Based on Two-Dimensional Covalent-Organic Frameworks

A detailed investigation of dielectric-modulated dual-gate TMD FET based label-free biosensor via analytical modelling

Spacer effects on the performance of MoTe2/MoSe2 and MoTe2/WSe2 heterostructure double gate MOSFET

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