Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs

Rawat, Gopal; Kumar, Sanjay; Goel, Ekta; Kumar, Mukesh; Dubey, Sarvesh; Jit, Satyabrata

doi:10.1088/1674-4926/35/8/084001

Cited by 18 publications

(4 citation statements)

References 23 publications

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“…Figure 2(a) also shows that the proposed field effect transistor gives a sub-threshold swing (SS) equal to 16.84, 11.54 and 6.23 mV/decade for the non-doped, low doping and high doping concentrations, respectively. These values are much smaller than the best value of the SS in conventional MOSFETs which is 60 mV/decade and lower than for silicon-on-insulator MOSFET [31], graphene nanoribbon TFET [12], double gate silicon TFET [32] and InGaAs/InP TFET [29] which are 60, 14, 40 and 93 mV/decade, respectively.…”

Section: Transfer Characteristicsmentioning

confidence: 66%

Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects

Bayani

Dideban

Vali

et al. 2016

Semicond. Sci. Technol.

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In this paper, a scheme of the germanene nanoribbon tunneling field effect transistor (GeNR-TFET) is proposed. The characteristics and analog performance of the device were theoretically investigated by exploiting the electrical properties of a germanene nanoribbon and applying the doping concentration in the source and drain regions at 300 K and 4 K temperatures. The device parameters were obtained using a non-equilibrium Green's function (NEGF) method within the tight binding (TB) Hamiltonian. The TB Hamiltonian was extracted from the density functional theory (DFT) through the Wannier function. We find that by increasing the doping concentration the I on current increases which leads to an improvement of the I on /I off ratio to 10 5 . Moreover, decreasing the temperature from 300 K to 4 K causes the I off to becometen times smaller. We find that the device output characteristic displays a negative differential conductance with a good peak-to-valley ratio which is improved by increasing the doping concentration. The analog performance of the device is also investigated in the subthreshold regime of operation by varying the doping concentration. It is observed that by increasing the device doping concentration, the analog figures of merit can be improved.

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Section: Transfer Characteristicsmentioning

confidence: 66%

Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects

Bayani

Dideban

Vali

et al. 2016

Semicond. Sci. Technol.

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“…It should be noticed that the present work deals with subthreshold characteristics only. Therefore, there is a large discrepancy between calculated results and simulation results above the subthreshold region [2].…”

Section: Submentioning

confidence: 93%

Overcoming sub-threshold slope degradation in sub 10 nm technologies

2023

ACE

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Sub-threshold slope degradation is one of the difficulties preventing microchip scaling. This paper mainly concentrates on sub-threshold region of MOSFET and introduces the definition of sub-threshold swing (inverse of sub-threshold slope). The reason for this work is also told. Basing on ideal assumptions, the work considers 8 influence factors of sub-threshold. After comparison, high-k material, lower doping density, higher bias voltage and more ideal surface are good ways to solve the problem. Changing work function is conditional. The result is meaningful for further understanding of sub-threshold region and further scaling-down.

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“…To validate this hypothesis, the semiconductor physical model of the interelectrode capacitance is transformed into an equivalent fractional-order model first according to the mathematical operation relation of Riemann-Liouville fractional calculus and the exponential form semiconductor physical model. Then, Silvaco TCAD simulator is exploited to design NMOS devices with different drain doping concentrations (Singh, 2019;Kelsall et al, 1994;Theron and Plessis, 1994;Goel et al, 2016;Rawat et al, 2014aRawat et al, , 2014b, and ATLAS AC small signal simulation tool is adopted to obtain the C-V characteristic data of the devices. According to the data obtained in simulation, a differential evolution (DE)-based offline scheme is adopted then to identify the parameters of the proposed fractional-order equivalent model.…”

Section: Introductionmentioning

confidence: 99%

A fractional-order equivalent model for characterizing the interelectrode capacitance of MOSFETs

Huang

Chen

2022

COMPEL

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Purpose This paper aims to characterize the relationship between the interelectrode capacitance (C) of metal-oxide-semiconductor field-effect transistors (MOSFETs) and the applied bias voltage (V) by a fractional-order equivalent model. Design/methodology/approach A Riemann–Liouville-type fractional-order equivalent model is proposed for the C–V characteristic of MOSFETs, which is based on the mathematical relationship between fractional calculus and the semiconductor physical model for the interelectrode capacitance of metal oxide semiconductor structure. The C–V characteristic data of an N-channel MOSFET are obtained by Silvaco TCAD simulation. A differential evolution-based offline scheme is exploited for the parameter identification of the proposed model. Findings According to the results of theoretical analysis, mathematical derivation, simulation and comparison, this paper illustrates that, along with the variation of bias voltage applied, the interelectrode capacitance (C) of MOSFETs performs a fractional-order characteristic. Originality/value This work uncovers the fractional-order characteristic of MOSFETs’ interelectrode capacitance. By the proposed model, the influence of doping concentration on the gate leakage parasitic capacitance of MOSFETs can be revealed. In the pre-defined doping concentration range, the relative error of the proposed model is less than 5% for the description of C–V characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs). Compared to some existing models, the proposed model has advantages in both model accuracy and model complexity, and the variation of model parameters can directly reflect the relationship between the characteristics of MOSFETs and the doping concentration of materials. Accordingly, the proposed model can be used for the microcosmic mechanism analysis of MOSFETs. The results of the analysis produce evidence for the widespread existence of fractional-order characteristics in the physical world.

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Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs

Cited by 18 publications

References 23 publications

Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects

Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects

Overcoming sub-threshold slope degradation in sub 10 nm technologies

A fractional-order equivalent model for characterizing the interelectrode capacitance of MOSFETs

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