Analytical Modelling of Dielectric Modulated Negative Capacitance MoS2-FET for Biosensor Application

Abstract

In this paper, a dielectric modulated negative capacitance (NC)-MoS<sub>2</sub> field effect transistor (FET)-based biosensor is proposed for label-free detection of biomolecules such as enzymes, proteins, DNA, etc. Various reports present experimental demonstration and modelling of NC-MoS<sub>2</sub> FET, but it is never utilized as a dielectric modulated biosensor. Therefore, in this work, the modelling, characterization and sensitivity analysis of dielectric modulated NC-MoS<sub>2</sub> FET is focussed. For immobilization of biomolecules, a nanocavity is formed below the gate by etching some portion of the gate oxide material. The immobilization of biomolecules in the cavity leads to a variation of different electrostatic properties such as surface potential, threshold voltage, drain current, and subthreshold-swing (SS) which can be utilized as sensing parameters. An analytical model for the proposed biosensor is also developed in the subthreshold region by considering the properties of two-dimensional (2D) ferroelectric materials and benchmarked with TCAD device simulations. The effect of change of gate length and doping concentration on different electrical properties is also analysed to estimate the optimum value of channel doping. The results prove that the proposed device can be used for next-generation low power label-free biosensor which shows enhanced sensitivity as compared to traditional FET-based biosensors.

Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

“…So the DM-TFET biosensor suppress the difficulties faced by the CFET biosensor in terms of sensitivity, response time, power consumption. The superior characteristics of the DM-TFET biosensors attracted many researchers to carry out immense research in this field and reported impressive statistics device sensitivity [11][12][13][14][15][16][17][18][19][20][21][22][23][24]. The low on current (I on ) and ambipolar conductivity are the two stumbling blocks for achieving high performance for TFET devices, so the device is not recommended for digital applications.…”