Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation

Abstract

Effective density of state, saturation velocity and high field mobility analytical models for hydrodynamic simulation of silicon-germanium hetero-junction bipolar transistors have been derived.

5. Reliability

“…Another numerical analysis was performed using Sentaurus TCAD by Synopsys [Syn] to obtain a deep insight into the degradation mechanism; the hydrodynamic model with optimized parameters reported in [Sas10] was activated. More specifically, simulations were performed to extract the evolution of the trap density N t at the spacer interface (P2, P3, and P23) and ST-Si interface (only P23) as follows: for each time instant at which the nonstressing forward and reverse Gummel plots were measured and recorded, N t (assumed to be at an assigned energy level E t such as E t -E V = 0.6 eV, E V being the valence band limit) was optimized so as to align the simulated plots with the experimental ones.…”

“…In conventional approaches for thermal simulations, for a rectangular emitter window, such a region is modeled as either a rectangular or a parallelepiped heat source (e.g., [dAl10,Sah13]), both with uniform power density. In [dAl16], the dissipation region is more accurately modeled by resorting to 2-D electrical simulations of the DUTs preliminarily performed with Sentaurus in order to determine a realistic power density distribution; for this aim, the hydrodynamic model with transport parameters optimized for SiGe:C HBTs [Sas10] was used. By referring to the schematic cross section of the DUTs represented in Figure 5.27, the heat sources exploited in the Comsol structures were built with the power density pattern obtained by reproducing the distribution computed by Sentaurus in the (x, z) plane and assuming a uniform density along the device length (i.e., along the y-axis orthogonal to the cross section).…”

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

“…S4 (online). Further works about carrier mobility in SiGe bulks have been reported [54][55][56][57][58][59][60]. The carrier mobility is affected by impurities, doping concentration, and temperature.…”

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

“…In addition, we also introduce the field mobility dependence based on the extended Canali model [19]:…”