Analytical prediction of switching losses in MOSFETs for variable drain-source voltage and current applications

Abstract

This paper presents an analytical modeling of a MOSFET during switching operation, aimed at determining the switching losses. Moreover it compares the theoretical results with experimental data. The switching losses are calculated for different DC link voltages and load currents. The stray inductances and capacitances of the MOSFET were considered in the modeling. Besides the parasitic inductance in the circuit was calculated from the measurement and was applied in the loss modeling. It is shown that the switching waveforms obtained from the measurement are in agreement with the simulation results. However, due to the limitations of the drive circuit, the driver circuit output gate signal registered in the measurements had to be used in the simulations. 978-1-4673-6322-8/13/$31.00 c 2013 IEEE

Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC–DC Power Converters

“…VGS is obtained from the Laplace transformation of the equivalent circuit of the stage as done in previous works [1], [2]. …”

“…Some of these models [3]- [5] are mainly focused on the low voltage range (<40V), thus being, specialized in emulating features related to highspeed switching rather than replicating the details related to the architecture of the device. Other works [1], [2] provide dedicated models for high voltage MOSFET (>500V). However, these models are actually designed for Planar technologies (see Fig.…”

Electrothermal Design of a Discrete GaN-Based Converter for Integrated Modular Motor Drives

“…If the converter parasitics are neglected, the temperature dependant forward and reverse conduction paths losses in the switch can be calculated from (3)-(9). (3)- (9) are derived starting from the analytical loss equations given in [18] and [19] for the switches and the diodes.…”

“…The equivalent mass density (ρ e ) and specific heat capacity (C pe ) are calculated using the volumetric ratio of each material with respect to the total volume of the PCB part under homogenization. C pe and ρ e can be calculated from (18) and (19) respectively.…”

“…So, it can be concluded that the instantaneous switching loss of the switch can be calculated from the instantaneous forward current and the junction temperature. The total instantaneous switch loss P s (t) can be calculated from (25) [27]. P s (t) = P cons (t) + P cond (t) + P son (t) + P sof f (t) (25)…”