2018
DOI: 10.15407/mfint.40.09.1201
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Analytically Solvable Differential Diffusion Equations Describing the Intermediate Phase Growth

Abstract: Analytical method to solve differential diffusion equations describing the growth of the phase wedge during the intermetallic-compound formation with a narrow concentration range of homogeneity in bicrystals is proposed. A model describing the diffusion phase growth from point source inside the polycrystal grains is regarded. Analytical method to solve differential diffusion equations for such a model is suggested. Parabolic, cubic, and fourth power diffusion regimes for different scales from nanometers to mic… Show more

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Cited by 8 publications
(6 citation statements)
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“…It agrees with in situ TEM observation of Si precipitate dissolution through the dislocation in the aluminium grain at 623K [17]. So, the diffusion law R=(αt) 1/3 from a point source (practically, through dislocation end point) obtained mathematically in [16] was proved experimentally in [17].…”
supporting
confidence: 84%
See 1 more Smart Citation
“…It agrees with in situ TEM observation of Si precipitate dissolution through the dislocation in the aluminium grain at 623K [17]. So, the diffusion law R=(αt) 1/3 from a point source (practically, through dislocation end point) obtained mathematically in [16] was proved experimentally in [17].…”
supporting
confidence: 84%
“…) ( It was found that dislocations can accelerate diffusion of Si from precipitate P1 (small, R10≈36 nm) to precipitate P2 (large, R2≈50 nm) in an Al grain at 623 K (Tm/T≈1.5, Tm=660.3 o C=660.3+273.15=933.45 K is the melting point of aluminium, ∆l≈100 nm is the dislocation length) by three orders of magnitude as compared with bulk diffusion (Dd=8.2x10 -13 m 2 /s). Moreover, precipitate P1 volume decreasing is linear as a function of time from t0=0 s to t1=900 s (R11≈32 nm) and up to t2=2640 s (R12≈17 nm, at t3=2880 s the precipitate P1 has completely dissolved by diffusion through dislocation end point) [17]…”
mentioning
confidence: 95%
“…A method of dislocation pipe diffusion parameter determination during the type B diffusion kinetics was suggested by the model of dislocation pipe diffusion involving outflow [6,20]. The method involves diffusion dislocation pipe kinetics for two different annealing times at the same temperature during the type B kinetics and dislocation pipe kinetics for one annealing time at other lower temperature during the type C kinetics.…”
Section: Diffusion Activation Energy Calculation In Pure Ironmentioning
confidence: 99%
“…Authors [16] didn't calculate diffusion activation energies and the pre-exponential factors, so we can do it using calculated data by k. p. gurov's and a. m. gusak's method or "constant flux method" [3,4,[18][19][20][21][22][23] (Table 2) and eqs. 27:…”
Section: Diffusion Activation Energy Calculation In the Cu-al Systemmentioning
confidence: 99%