Volume 1: Plant Operations, Maintenance, Installations and Life Cycle; Component Reliability and Materials Issues; Advanced App 2008
DOI: 10.1115/icone16-48766
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Analyze and Simulation of a Typical MEMS RPG Using MCNP Code

Abstract: Microbatteries are essential for portable electronics, cellular phones and MEMs devices to be miniaturized. Use of radioisotopes to realize nuclear microbatteries have been extensively researched. Electrical energy of a nuclear battery is produced from radioactive materials decaying by a suitable energy conversion process. Our approach in this paper is study of a direct collected charge to motion conversion. In this manuscript, the performance of radioisotope powered piezoelectric generator has been analyzed a… Show more

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“…In this research, we adopted MCNP to simulate the transport processes of β particles in semiconductor materials and to calculate the nuclear radiation–generated current I R . Theoretically, I R can be derived as [ 18 , 19 , 20 ]: where H is the thickness of the semiconductor, CE ( x ) is the collection probability of electron-hole pairs, q is the electron charge, E ( x ) is the energy deposition, E ( n ) is the energy deposition of the Nth layer semiconductor calculated by MCNP, and k is the number of total layers in the semiconductor during MCNP calculation; x n is the distance of the N th layer from the depletion region, L is the minority carrier diffusion length, and tan h is the hyperbolic tangent function.…”
Section: Structure and Modelsmentioning
confidence: 99%
“…In this research, we adopted MCNP to simulate the transport processes of β particles in semiconductor materials and to calculate the nuclear radiation–generated current I R . Theoretically, I R can be derived as [ 18 , 19 , 20 ]: where H is the thickness of the semiconductor, CE ( x ) is the collection probability of electron-hole pairs, q is the electron charge, E ( x ) is the energy deposition, E ( n ) is the energy deposition of the Nth layer semiconductor calculated by MCNP, and k is the number of total layers in the semiconductor during MCNP calculation; x n is the distance of the N th layer from the depletion region, L is the minority carrier diffusion length, and tan h is the hyperbolic tangent function.…”
Section: Structure and Modelsmentioning
confidence: 99%