2019 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-TW) 2019
DOI: 10.1109/icce-tw46550.2019.8991697
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Analyzing Gate-Driven Circuit Parameters for Adding ESD Performances

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Cited by 3 publications
(1 citation statement)
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“…In CMOS technologies, bidirectional clamps to ground are often based on gategrounded NMOS (GGNMOS) [32,33], gate-coupling NMOS (GCNMOS) [34], or RC-triggered NMOS [35,36]. The voltage at the protected pad is limited either by the breakdown or the snap-back activation of the ESD clamp.…”
Section: Integrated Interface Circuit With Multi-level Voltage Clampingmentioning
confidence: 99%
“…In CMOS technologies, bidirectional clamps to ground are often based on gategrounded NMOS (GGNMOS) [32,33], gate-coupling NMOS (GCNMOS) [34], or RC-triggered NMOS [35,36]. The voltage at the protected pad is limited either by the breakdown or the snap-back activation of the ESD clamp.…”
Section: Integrated Interface Circuit With Multi-level Voltage Clampingmentioning
confidence: 99%