Analyzing switching variability of SiNx-based RRAM in terms of Joule heating dissipation

Abstract

In this paper, the switching variability of SiNx-based RRAM with reactive metal electrodes in terms of Joule heating dissipation was analyzed. The electrode with high (low) thermal conductivity showed low LRS (HRS) variability in SiNx-based RRAM. By analyzing the I–V characteristics and the current conduction mechanism, we proposed that the thermal conductivity of reactive electrodes significantly affected the number of ions involved in the switching process and the vacancies distribution in the switching layer, resulting in the difference in the switching performance. This study suggested that attention should be paid to the influence of electrode thermal conductivity on variability, providing ideas for designing RRAM with low switching variability.