Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles

Shi, Qing; Guo, Hong; Zhu, Yu; Liu, Lei

doi:10.1103/physrevapplied.3.064008

Cited by 10 publications

(8 citation statements)

References 22 publications

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“…The reason is that localized doping near the source or drain region results in larger variation of the tunneling barrier height and hence larger variation of the tunneling current. It is worth mentioning that the off-state conductance and its variation can be fitted very well by a Wentzel-Kramers-Brillouin (WKB) model [16], confirming the tunneling nature of the leakage current.…”

Section: Si Transistors With Localized Dopingmentioning

confidence: 52%

“…Therefore the leakage current is an important issue in the design of nanotransistors. In this section, we shall investigate the possibility of suppressing leakage current and its variation by controlling the dopants' location in the channel region of Si transistors [15,16].…”

Section: Si Transistors With Localized Dopingmentioning

confidence: 99%

“…8. 16 shows the average and the variation of the off-state conductance for localized doping and uniform doping. One can see that localized doping away from the source or drain region not only suppresses the conductance but also suppresses its variation as compared to that of uniform doping.…”

Section: Si Transistors With Localized Dopingmentioning

confidence: 99%

See 2 more Smart Citations

Kaleidoscope of the physics in disordered systems

Zhu¹,

Liu²,

Guo³

2016

Atomistic Simulation of Quantum Transport in Nanoelectronic Devices

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Section: Si Transistors With Localized Dopingmentioning

confidence: 52%

Section: Si Transistors With Localized Dopingmentioning

confidence: 99%

See 1 more Smart Citation

Kaleidoscope of the physics in disordered systems

Zhu¹,

Liu²,

Guo³

2016

Atomistic Simulation of Quantum Transport in Nanoelectronic Devices

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“…1. This work work is published in [9] in detail and here we just give some brief outlines of it. Our goal is to predict the source-to-drain conductance variability in the off-state for channels ranging from 6.5 to 15.2 nm, doped with different concentrations of boron impurity atoms.…”

Section: Application: Silicon Nanofetmentioning

confidence: 98%

“…2(a)). The dotted curves are fitted to WKB model [9]. We assume that the conductance variability is proportional to its derivative over potential parameters such as potential barrier length or height.…”

Section: Application: Silicon Nanofetmentioning

confidence: 99%

Analyzing variability in short-channel quantum transport from atomistic first principles

Shi

Guo

Wang

et al. 2015

2015 International Workshop on Computational Electronics (IWCE)

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Due to random impurity fluctuations, the deviceto-device variability is a serious challenge to emerging nanoelectronics. In this work we present a theoretical formalism and its numerical realization to predict quantum-transport variability from atomistic first principles. Our approach is named the non-equilibrium coherent-potential approximation (NECPA) which can be applied to predict both the average and the variance of the transmission coefficients such that fluctuations due to random impurities can be predicted without lengthy brute force computations of ensemble of disordered configurations. As an example, we quantitatively analyzed the off-state tunnel conductance variability in Si nanosized fieldeffect transistor channels with channel lengths ranging from 6.5 to 15.2 nm doped with different concentrations of boron impurity atoms. The variability is predicted as a function of the doping concentration, channel length, and the doping positions. The device physics is understood from the microscopic details of the potential profile in the tunnel barrier. Other systems will also be presented as examples.

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Quantum Transport in Gated Dangling-Bond Atomic Wires

et al. 2016

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A single line of dangling bonds (DBs) on Si(100)-2 × 1:H surface forms a perfect metallic atomic-wire. In this work, we investigate quantum transport properties of such dangling bond wires (DBWs) by a state-of-the-art first-principles technique. It is found that the conductance of the DBW can be gated by electrostatic potential and orbital overlap due to only a single DB center (DBC) within a distance of ∼16 Å from the DBW. The gating effect is more pronounced for two DBCs and especially, when these two DB "gates" are within ∼3.9 Å from each other. These effective length scales are in excellent agreement with those measured in scanning tunnelling microscope experiments. By analyzing transmission spectrum and density of states of DBC-DBW systems, with or without subsurface doping, for different length of the DBW, distance between DBCs and the DBW, and distance between DB gates, we conclude that charge transport in a DBW can be regulated to have both an on-state and an off-state using only one or two DBs.

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Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles

Cited by 10 publications

References 22 publications

Kaleidoscope of the physics in disordered systems

Kaleidoscope of the physics in disordered systems

Analyzing variability in short-channel quantum transport from atomistic first principles

Quantum Transport in Gated Dangling-Bond Atomic Wires

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