2021
DOI: 10.1103/physrevb.103.245134
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Anderson localization effects on the doped Hubbard model

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Cited by 5 publications
(3 citation statements)
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“…Usually, this is ascribed to intrinsic effects, in which pairing correlations diminish with doping, due to screening of local Coulomb interactions [19], but some authours have also addressed the role of disorder in surpressing superconductivity [20][21][22]. Disorder, however, is usually incorporated as random on-site energies in Hubbardlike models that can lead to Anderson localization phenomena [23][24][25], thus it is important to extend this effects to include also the possiblity of severe structural disorder within finite regions of the crystal.…”
Section: Introductionmentioning
confidence: 99%
“…Usually, this is ascribed to intrinsic effects, in which pairing correlations diminish with doping, due to screening of local Coulomb interactions [19], but some authours have also addressed the role of disorder in surpressing superconductivity [20][21][22]. Disorder, however, is usually incorporated as random on-site energies in Hubbardlike models that can lead to Anderson localization phenomena [23][24][25], thus it is important to extend this effects to include also the possiblity of severe structural disorder within finite regions of the crystal.…”
Section: Introductionmentioning
confidence: 99%
“…Usually, this is ascribed to intrinsic effects, in which pairing correlations diminish with doping, due to screening of local Coulomb interactions [19], but some authors have also addressed the role of disorder in suppressing superconductivity [20][21][22]. Disorder, however, is usually incorporated as random on-site energies in Hubbard-like models that can lead to Anderson localization phenomena [23][24][25], thus it is important to extend these effects to include also the possibility of severe structural disorder within finite regions of the crystal.…”
Section: Introductionmentioning
confidence: 99%
“…In the half-filled AHM, we study how Anderson and Coulomb disorders might jointly contribute to the metal-insulator transition (MIT). In order to solve the problem, we employ the typical medium dynamical mean-field theory (TMT-DMFT) with geometrical and arithmetical averages over the disorder configurations, which is a successful method for the MIT on a disordered lattice [17][18][19][20][21][22][23][24][25]. By selecting appropriate decoupling schemes, we use the equation of motion technique as an impurity solver, which is a good option for a rapid and reliable solution [26,27].…”
Section: Introductionmentioning
confidence: 99%