Angle dependent conductivity in graphene FET transistors

Fuentevilla, C. H.; Lejarreta, J. D.; Cobaleda, C.; Díez, E.

doi:10.1016/j.sse.2014.11.007

Cited by 1 publication

(1 citation statement)

References 24 publications

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“…In Figure 1b, we consider a device design contrasted with a rectangular single layer of silicene that is deposited on the dielectric layer SiO

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and has two gold contacts for the source and drain, a back gate, and a top gate. [ 31 ] The top gate modifies the current that flows through the device from source to drain, passing over a potential barrier, while the rear gate regulates the charge carrier density of the sample. Since the sample is large enough to not be considered a strip, we assume that there are no edge effects.…”

Section: Theoretical Modelmentioning

confidence: 99%

Tunneling Effect of Fermions in Silicene Through Potential Barrier

Zriouel,

Jellal

2024

Annalen der Physik

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The influence of a a rectangular potential barrier on the quantum transport of fermions in silicene is explored. Specifically, analytical solutions are presented to derive transmission and reflection probabilities together with conductance. It is shown that the transmission is highly sensitive to both the barrier height and incident energy. As a result, the occurrence of Klein and resonant tunnelings is observed, with a significant dependence on the barrier width. Notably, it is found that perfect transmission extends beyond normal incidence, occurring at various oblique angles. Moreover, the transmission pattern exhibits a more fragmented structure with increasing barrier width, reminiscent of Fabry‐Pérot resonances. In contrast, the conductance displays a non‐monotonic dependence on incident energy and features rapid oscillations with a rising barrier height. However, at a constant barrier height, there is a minimal disparity among conductance profiles for high incident energy values. When incident energy equals the barrier height, the conductance experiences a local minimum. For a thin barrier, a substantial reduction in conductance is observed, unlike the oscillatory behavior seen with a thicker barrier. These findings underscore the progress in silicene research and offer a fresh perspective on the relativistic applications of tunneling in this material.

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“…In Figure 1b, we consider a device design contrasted with a rectangular single layer of silicene that is deposited on the dielectric layer SiO