Angle-resolved photoelectron spectroscopy study of theInP(100)−(2×4)surface electronic structure

Abstract

The InP͑100͒-͑2ϫ4͒ surface electronic structure was studied using angle-resolved photoelectron spectroscopy together with synchrotron radiation. We identify three surface states occurring in the gaps of the projected bulk bands. The highest level state, located at binding energy E B ϭ1.0 eV, is consistent with previous findings. The second and third states, located at E B ϭ1.8 and 4.3 eV, have not been reported previously. All three of these surface states show no discernible dispersion as compared to the surface states on InAs͑100͒-͑2ϫ4͒ and GaAs͑100͒-͑2ϫ4͒. This result suggests that the elements of the InP͑100͒-͑2ϫ4͒ surface unit cells are more isolated from each other than they are for the InAs͑100͒-͑2ϫ4͒ or the GaAs͑100͒-͑2ϫ4͒ surface.

Electronic properties of C60/InP(001) heterostructures

“…17.50 ± 0.05 eV together with the above-mentioned energy differences, we determine an onset energy of E F − E InP VBM = 0.70 ± 0.10 eV. This value is close to the photoemission results reported earlier for InP(001) [22,23]. The same valence band maximum, E InP VBM , is found by the linear interpolation of the onset of the valence band emission to the baseline, as illustrated in figure 3(b).…”

Electronic structure of the Si-rich3C−SiC(001)3×2surface

“…Similar nondispersing surface states were recently observed for the InP(001)2ϫ4 surface. 37 This result was then interpreted as evidence of well isolated surface unit cells due to the unique surface structure probably not based on dimers. However, since the surface structure is based on Si dimers in the case of the 3C-SiC(001)3ϫ2 surface, the nondispersing surface states suggest a unique bond configuration of the surface Si dimers.…”