Angle-resolved SIMS studies of AlxGa(1 − x)As 001 (2 × 4) surface reconstruction

Goss, S. H.; Kodali, Prasad B. S.; Garrison, Barbara J.; Winograd, Nicholas

doi:10.1016/s0039-6028(97)00235-5

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1999

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“…Molecular dynamics simulations of the keV bombardment process are useful in determining desorption mechanisms from crystalline solids. 38,41,43 In particular, detailed mechanistic study has shown that atoms in a diamond lattice eject via two primary mechanisms. First, the closest atom in the layer just below the surface layer may cause desorption via nearest-neighbor collision (⌬ 1 mechanism͒.…”

Section: Theoretical Results and Discussionmentioning

confidence: 99%

Atomic placement of Al on the GaAs {001}c(4×4)reconstruction determined by angle-resolved secondary-ion mass spectrometry

et al. 1999

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The atomic structure of the initial Al/GaAs ͕001͖ c(4ϫ4) interface has been examined by angle-resolved secondary-ion mass spectrometry. We find that Al atoms adsorb to second layer As atoms and do not disrupt the surface reconstruction up to 1.0 ML of deposited Al when prepared in situ via molecular beam epitaxy. The Al atoms are found not to adsorb to first layer As atoms and do not dimerize on this surface. The structure is determined by comparing angular distributions of Al ϩ and Ga ϩ ions to molecular-dynamics simulations of the ion bombardment event.

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Section: Theoretical Results and Discussionmentioning

confidence: 99%