Angled etching of Si by ClF 3 –Ar gas cluster injection

Self Cite

• The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from plasma. The characteristics of etching by ClF3–Ar gas cluster injection were investigated at various target distances, pattern widths, and sample temperatures. As a result, the relationship between the etching conditions and the aspect ratio was clarified, and an equation that can predict the maximum limit of aspect ratio was derived from the ClF3 flux and pattern widths. Then high aspect etching with an aspect ratio exceeding 20 is realized. And also, 3D lever structure of 6 layers can be fabricated by double-angled etching with neutral cluster injection at the condition for high aspect etching.

Section: ( )mentioning

confidence: 99%

High aspect (>20) etching with reactive gas cluster injection

SEKI¹,

Yamamoto²,

Koike³

et al. 2022

Self Cite

“…[74][75][76][77][78][79][80][81][82][83] Recently, angled features were fabricated by a ClF 3 -Ar gas cluster injection system. 84,85) Also, transport and redeposition of neutrals and by-products should be taken into consideration as causes of distortion. Nishikawa et al reported in situ monitoring of etchant and product species in plasma etching using Fourier transform infrared spectroscopy (FT-IR).…”

Section: Har Feature Profile Control: From Two Dimensions To Three Di...mentioning

confidence: 99%

Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?

Ishikawa

Karahashi

Ishijima

et al. 2018

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication of high-aspect-ratio features, including emerging design technology for manufacturability. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands of nanoscale deposition and etching technologies for high-aspect-ratio features. The discussion of our atomic-scale understanding of physicochemical reactions involving ion bombardment and neutral transport presents the major challenges shared across the plasma science and technology community. Focus is placed on advances in fabrication technology that control surface reactions on three-dimensional features, as well as state-of-the-art techniques used in semiconductor manufacturing with a brief summary of future challenges.

“…119) Also, reactive etching by ClF 3 -Ar neutral cluster beam etching was reported. 120,121) The actual fabrication of high-aspect-ratio Si structures by this method was reported. [122][123][124][125] Chemical dry etching technologies based on fluorine etching reactions in NO and F 2 mixtures were found to be highly dependent on the wafer temperature.…”

Section: Ion Trajectories In High-aspect Ratio Etchingmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.