Angular dependence of sputtering for nickel in ferro and paramagnetic states

Konov, D.A.; Mosunov, A. S.; Adamov, G.V.; Shelyakin, L.B.; Yurasova, V. E.

doi:10.1016/s0042-207x(01)00374-8

Cited by 11 publications

(1 citation statement)

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“…The evaporation controls the deposition rate of the molten target the same as in hot target sputtering and the flux density is even higher as the erosive flux density increases exponentially dependent on the target temperature 31,37 . Moreover, the weaker binding of the liquid-state atoms on the molten target compared to solid-state targets leads to easier ejection, thereby increasing the flux density of molecules 38 . Even when the reasons for the high flux density of molecules from the MTS are addressed, further evaluation of the plasma properties, local ionization, and conferment would be interesting when the evaporation occurs simultaneously with the sputtering.…”

Section: Discussionmentioning

confidence: 99%

High mobility Si0.15Ge0.85 growth by using the molten target sputtering (MTS) within heteroepitaxy framework

Kim

2019

Sci Rep

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High-speed SiGe film is promising use in photonics and electronics technologies continue to replace Si-based devices. High mobility Si 0.15 Ge 0.85 film on sapphire was grown at 890 °C substrate temperature by using a conventional magnetron sputtering system within the heteroepitaxy framework. 890 °C substrate temperate is impractical for commercial device manufacturing due to long thermal soak, loading time, and costly process. To leverage the practical SiGe device applications, the Molten Target Sputtering (MTS) techniques is developed. The MTS is an economic and robust process from high flux density and liquid-state of molecules benefits. At 500 °C, the lowest substrate temperature, high mobility Si 0.15 Ge 0.85 film with continues morphology and 99.7% majority-orientation were grown by using the MTS. The hall electron mobilities of the Si 0.15 Ge 0.85 grown at 500 °C are 456 cm 2 V −1 s −1 and 123.9 cm 2 V −1 s −1 at 5.59 × 10 18 cm 3 and 3.5 × 10 20 cm 3 carrier concentration at 22.38 °C, respectively. The values are 550% higher hall electron mobilities than that of Si at equivalent carrier concentration and temperatures. We envision that the MTS is beneficial for the heteroepitaxy framework film growth that requires high substrate temperature to overcome the large lattice parameter mismatch between film and substrate.

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Section: Discussionmentioning

confidence: 99%