Angular dependence of the ion-induced secondary-electron yield from solids

Svensson, B. G.; Holmén, G.; Buren, A. L. Van

doi:10.1103/physrevb.24.3749

Cited by 56 publications

(36 citation statements)

References 9 publications

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“…This is valid due to the large secondary electron yield for ions striking a channel that results from the combination of the dielectric nature of the channel 41 and the glancing angle of incidence of the radiation striking a channel. 39,40 This is consistent with the results of several studies using keV ions as the primary radiation for which Q C Ϸ1. [43][44][45] Therefore, the apparent maximum value of Q W (E), which is obtained when Q C ϭ1 and EϾ1 V/mm, is approximately 0.66 for incident 20 keV H ϩ .…”

Section: A Applied Electric Field Effects On the Quantum Detection Esupporting

confidence: 90%

“…For incident ions striking a channel wall, the secondary electron yield is significantly increased due to the glancing angle of incidence 39,40 and the dielectric properties 41 of the channel walls. Here, we expect that this enhanced secondary electron yield results in a quantum detection efficiency close to unity for ions impacting a channel wall.…”

Section: Secondary Electron Yield Measurementmentioning

confidence: 99%

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Effect of local electric fields on microchannel plate detection of incident 20 keV protons

Funsten

Suszcynsky

Harper

et al. 1996

Review of Scientific Instruments

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Absolute detection efficiencies of a microchannel plate detector for 0.5-5 keV neutrals Rev. Sci. Instrum. 81, 063301 (2010); 10.1063/1.3442514Current response characteristics of microchannel plates xray detector using synchrotron radiation (0.6-2 keV and 5-20 keV) Rev. Sci. Instrum. 59, 252 (1988);Relative electron detection efficiency of microchannel plates from 0-3 keV Rev.We present data demonstrating the influence of an applied electric field E oriented normal to the input surface of a microchannel plate ͑MCP͒ detector on the critical operating parameters of the detector, including the quantum detection efficiency, the spatial resolution, and pulse height distribution. The MCP detector response is characterized using 20 keV protons as the primary radiation. An applied electric field EϽϪ4 V/mm, where a negative value of E corresponds to a nearby object that is biased positive relative to the input surface, results in a high spatial resolution and a quantum detection efficiency that is approximately equal to the open area ratio of the MCP. An electric field Ϫ1ϽEϽ5 V/mm results in low spatial resolution, in which up to 32% of the measured signal appears as a localized noise that extends several millimeters from the point of ion impact, and a maximum quantum detection efficiency of approximately 0.87. Furthermore, a separate peak in the pulse-height distribution arises from ions striking the web of the MCP detector and has a much lower pulse magnitude than that of ions striking channels. For EϾ5 V/mm, the spatial resolution increases, and the quantum detection efficiency slightly decreases from its maximum value with increasing E. The characteristics of each of these electric field configurations are analyzed in the context of the yield and transport of secondary electrons created at the web of the MCP detector, and the results can be scaled to other ions and energies according to the secondary electron yield of ions striking the web.

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Section: A Applied Electric Field Effects On the Quantum Detection Esupporting

confidence: 90%

Section: Secondary Electron Yield Measurementmentioning

confidence: 99%

Effect of local electric fields on microchannel plate detection of incident 20 keV protons

Funsten

Suszcynsky

Harper

et al. 1996

Review of Scientific Instruments

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“…[13][14][15][16]21,22 The same equation holds true for the electron-and ion-induced secondary yields and sputter yields. [13][14][15][16]21,22 The same equation holds true for the electron-and ion-induced secondary yields and sputter yields.…”

Section: Resultsmentioning

confidence: 79%

Understanding image contrast to optimize procedures for focused ion beam contact level circuit editing

Niles

Kee

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…A more plausible explanation is the limited accuracy of the stopping cross sections applied in the calculations. The nuclear stopping cross section, Sn, appears firmly established (15), but as discussed by several authors (15,(20)(21)(22)(23)(24) and as illustrated by the large deviations between the different estimates in Fig. 3 (15,(20)(21)(22)(23)(24), and according to the present results Se values close to those-used in TRIM-87 appear reasonable at low BF2 energies (<20 keV), while the estimate by TRIM-89 is more appropriate at the high energies (-140 keV).…”

Section: Discussionmentioning

confidence: 99%

“…The nuclear stopping cross section, Sn, appears firmly established (15), but as discussed by several authors (15,(20)(21)(22)(23)(24) and as illustrated by the large deviations between the different estimates in Fig. 3 (15,(20)(21)(22)(23)(24), and according to the present results Se values close to those-used in TRIM-87 appear reasonable at low BF2 energies (<20 keV), while the estimate by TRIM-89 is more appropriate at the high energies (-140 keV). This presumably indicates a transition from a low-energy regime with low energy loss to a region with more "ordinary" Se values; such a dependence may be anticipated in materials with a bandgap (semiconductors, insulators), since there are few low-energy excitation levels available (15).…”

Section: Discussionmentioning

confidence: 99%

Evaluation of Boron Distributions in Amorphous 49 BF 2 + ‐ Implanted Silicon

Tirén

Svensson

1991

J. Electrochem. Soc.

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Implantation of 49BF2+ ions into evaporated amorphous silicon films has been investigated using energies in the range from 20 to 140 keV. The implanted profiles were characterized by secondary ion mass spectrometry (SIMS), and quantitative data for the first four moments of the profiles (Rp, AR m % and 13) are presented. The absolute values given for Rp and hRp ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-04-09 to IP

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Angular dependence of the ion-induced secondary-electron yield from solids

Cited by 56 publications

References 9 publications

Effect of local electric fields on microchannel plate detection of incident 20 keV protons

Effect of local electric fields on microchannel plate detection of incident 20 keV protons

Understanding image contrast to optimize procedures for focused ion beam contact level circuit editing

Evaluation of Boron Distributions in Amorphous 49 BF 2 + ‐ Implanted Silicon

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