Angular distribution of atoms during the magnetron sputtering of polycrystalline targets

Abstract

The angular distributions of atoms are measured during the dc magnetron sputtering of Mg, Al, Cu, Ag, Ta, Pt, Au, Ti, Cr, Zn, Zr, and Nb polycrystals by Ar ions with an energy up to 0.5 keV. These angular distributions are phenomenologically approximated, and adjustable parameters are found for each element. Computer simulation of sputtering based on the pair collision approximation is used to determine the coef ficient of proportionality between the magnetron discharge voltage and the average sputtering ion energy and to find the interatomic interaction potentials that provide the most accurate description of the experimental data. Both the angular distribution width and the sputtering coefficient are shown to have a periodic depen dence on the atomic number of the target Z 2 , and materials with the maximum sputtering coefficients have the narrowest distribution of sputtered atoms.

Doppler line shape model for the W I 5d56s—5d56p transition at 400.9 nm in tokamaks

“…As the remaining parameters (A, B and m) were not given explicitly by the authors, we have fitted them on the angular distributions provided by the authors [23,24,25]. The polynomial fits obtained agree well with the experimental and numerical results reported by several sources [23,25,26,27].…”

“…Note that the situation would be different in another observation direction. Such a distribution can be represented as [26]:…”

Simulation and Optimization of Film Thickness Uniformity in Physical Vapor Deposition

“…During this process, one or more atoms are sputtered from the target [24,37]. Therefore, the more complex cosine distribution A cos n (ϕ) − B cos m (ϕ) (where A, B, n, and m are all adjustable parameters) is needed for the emission characteristics of a sputtering source [38]. The emission characteristics of the sputtering source behave similarly to Knudsen's laws and in order to simplify the calculation, the approximation cos n (ϕ + ϕ 0 ) is used [12].…”

The Increase in Thickness Uniformity of Films Obtained by Magnetron Sputtering with Rotating Substrate

“…(1). However, Ti belongs to the materials for which the emission maximum during sputtering does not coincide with the direction of the normal to the surface (Figure 4) [10]. Therefore, for simulate the space distribution of the sputtered Ti particles the following function was applied…”