Angular Magnetic-Field-Dependent Tunneling Magnetoresistance Controlled by Electric Fields in an MTJ/PMN-PT Multiferroic Heterostructure

Wang, Shao-Ting; Yang, Yuanjun; He, Lanping; Li, Wanyu; Jiang, Yang; Wang, Chi; Li, Lü; Wei, C.D.; Sun, Yuchen; Ge, Weifeng; Cheng, Jung An; Zhang, Hui; Wang, Lan

doi:10.1007/s11664-023-10226-y

J. Electron. Mater.

2023

DOI: 10.1007/s11664-023-10226-y

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Angular Magnetic-Field-Dependent Tunneling Magnetoresistance Controlled by Electric Fields in an MTJ/PMN-PT Multiferroic Heterostructure

Shao-Ting Wang

Yuanjun Yang

Lanping He

et al.

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2024

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Magnetic switching driven by spin–orbit torque in topological-insulator-based (Bi0.5Sb0.5)2Te3/Ta/CoFe/Cu/CoFe/IrMn heterostructure

Zhou,

Wang,

Zhang

et al. 2024

Journal of Applied Physics

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The giant spin–orbit torque (SOT) generated by topological surface states in topological insulators (TIs) provides an energy-efficient writing method for magnetic memory. In this study, we demonstrate a topological insulator/spin valve (TI/SV) device that operates at room temperature. An ultrathin, high-quality TI (Bi0.5Sb0.5)2Te3 (BST) thin film is epitaxially grown as a functional layer on a (0001)-Al2O3 substrate via molecular beam epitaxy in ultrahigh vacuum. Subsequently, Ta/CoFe/Cu/CoFe/IrMn layers are grown on BST/Al2O3 thin films using magnetron sputtering to form TI/SV devices via a subsequent standard lithography process. The resulting TI/SV devices exhibit a giant magnetoresistance of up to ∼1.1% at room temperature. Additionally, a low switching current density of approximately 1.25 × 105 A cm−2 is achieved, which implies high potential for further reducing the energy consumption of SOT-based devices. The SOT conversion efficiency and charge-spin conversion efficiency of the TI layer are approximately 4.74 × 10−6 Oe A−1 cm2 and 1.33, respectively, as extracted from the SOT-induced shift of the magnetic switching field. Moreover, the switching current density reduces steadily with the device size scaling down. This study can facilitate the realization of energy-efficient magnetic memory devices in the future.

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Magnetic switching driven by spin–orbit torque in topological-insulator-based (Bi0.5Sb0.5)2Te3/Ta/CoFe/Cu/CoFe/IrMn heterostructure

Zhou,

Wang,

Zhang

et al. 2024

Journal of Applied Physics

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show abstract

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Angular Magnetic-Field-Dependent Tunneling Magnetoresistance Controlled by Electric Fields in an MTJ/PMN-PT Multiferroic Heterostructure

Cited by 1 publication

References 48 publications

Magnetic switching driven by spin–orbit torque in topological-insulator-based (Bi0.5Sb0.5)2Te3/Ta/CoFe/Cu/CoFe/IrMn heterostructure

Magnetic switching driven by spin–orbit torque in topological-insulator-based (Bi0.5Sb0.5)2Te3/Ta/CoFe/Cu/CoFe/IrMn heterostructure

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