Anharmonic thermal vibrations and the position parameter in wurtzite structures. I. Cadmium sulphide

Abstract

Intensity measurements have been carried out with an extended-face single crystal of hexagonal CdS using Mo Ka X-radiation at room temperature. The Bragg intensities were analysed by using the oneparticle potential (OPP) within the framework of Dawson's [Proc. R. Soc. London Set. A (1967), 298, [255][256][257][258][259][260][261][262][263] generalized structure-factor formulation with allowance for cubic anharmonic effects. The position parameter in the wurtzite structure which is not determined by symmetry is evaluated, and its dependence on the temperature-factor model used is demonstrated. The most reliable determination of this position parameter, with allowance for cubic anharmonicity, is 0.37715(8). The observation of significant differences between the intensities of nonsymmetry-related reflections occurring at the same Bragg angle demonstrates the possibility of measuring the anharmonicity of thermal vibrations.

Trichosporon jirovecii–mediated synthesis of cadmium sulfide nanoparticles

“…) exhibits prominent peaks at 2θ values of 28.07, 41.84 and 58.8, which could be indexed as scattering from the (111), (220), and (311) cubic phase CdS planes, respectively and according to JCPDS file no. 10–454.The diffraction pattern was also consistent with the hexagonal CdS phase as reported by Stevenson et al . By using the Scherreŕs equation d=0.8λ/βcosθ, where λ is the wavelength of the X‐ray radiation, β is the full width at half maximum (FWHM) of the (111) peak, and θ is the angle of diffraction, the average size of the CdS‐MD nanoparticles was determined to be of the order of 3 nm.…”

Doping of chemically deposited intrinsic CdS thin films to n type by thermal diffusion of indium

“…6 In the case of CdS:In film, there is also a peak due to indium appearing at 2Ϸ33 0 Table I. Optical band gap of 2.6 eV observed in the case of the as-prepared CdS film, is larger than 2.42 eV corresponding to bulk crystal at 300 K. This is in accordance with the earlier results.…”

Solvent‐Assisted Orientation of Poly(3‐hexylthiophene)‐Functionalized CdSe Nanorods Under an Electric Field

“…The samples were prepared by drop‐casting the NR solution on clean silicon wafers. XRD patterns of NRs (Figure ) of five different ARs showed similar patterns that indexed as Wurtzite structures . The (002) reflection is more intense and significantly narrower than the other peaks, indicating that NR growth occurs along the c ‐axis of the hexagonal lattice.…”