Anionic and cationic substitution in ZnO

Wenckstern, Holger von; Schmidt, Heidemarie; Brandt, M.; Lajn, Alexander; Pickenhain, R.; Lorenz, Michael; Grundmann, Marius; Hofmann, Detlev M.; Polity, A.; Meyer, B. K.; Saal, Hilkka; Binnewies, Michael; Börger, Alexander; Becker, Klaus‐Dieter; Tikhomirov, V. A.; Jug, Karl

doi:10.1016/j.progsolidstchem.2009.11.008

Cited by 93 publications

(60 citation statements)

References 144 publications

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“…ZnO-based semiconductors are recognized as very promising photonic materials in the ultraviolet and visible regions [1][2][3][4]. Doped ZnO has become a new trend in research and in technological applications, as its electronic and optical properties can be greatly improved.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of optical properties in Ca-doped ZnO alloys

Bai¹,

Lian

Zheng

et al. 2012

Open Physics

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Abstract:Various electronic and optical properties of Zn 1− Ca O ternary alloys of wurtzite structure are calculated using a first-principles approach based on the framework of the generalized gradient approximation to density-functional theory. In particular, on-site Coulomb interactions are introduced, which can reasonably well predict the electronic properties and band gaps of the Zn 1− Ca O (0≤x≤0.25) system. The imaginary part of the calculated dielectric function indicates that the optical transition between O 2p states in the valence band and Zn 4s states in the conduction band shifts to the high-energy range as the Ca concentration increases. The calculated band gap shows a significant increase with increasing Ca concentration. Therefore, Zn 1− Ca O ternary alloys may be a potential candidate alloy for optoelectronic materials, and especially for light-emitters and detectors.

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Section: Introductionmentioning

confidence: 99%

First-principles study of optical properties in Ca-doped ZnO alloys

Bai¹,

Lian

Zheng

et al. 2012

Open Physics

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“…[1][2][3] The matter of controlled doping, especially for the production of p-type material, is a particular challenge, and extensive research has been carried out toward that end for many years. 4,5 Recent theoretical work has re-examined some likely candidate p-type impurities such as N and cast doubts on its efficacy, 6 as it appears to be an extremely deep acceptor with an ionization energy of 1.3 eV. Other potential p-type impurities such as As have also been proposed, and p-type conductivity has been reported by various groups, but as yet, a commercially viable p-type doping recipe has not been reported.…”

Section: Introductionmentioning

confidence: 99%

Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted withAs73andGe73<

et al. 2011

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The results of photoluminescence (PL) measurements performed on high quality single crystal ZnO implanted with radioactive 73 Ga and 73 As, both of which decay to stable 73 Ge, are presented. Identical effects are observed in the two cases, with a sharp line at 3.3225(5) eV found to grow in intensity in accordance with the growth rate of the Ge daughter atom populations. On the strength of the well-established result that Ga occupies Zn sites, we conclude from the identical outcomes for 73 Ga and 73 As implantations that implanted As also preferentially occupies Zn sites. This result supports the findings of others that As preferentially occupies the Zn rather than the O site in ZnO. The thermal quenching energy of the 3.3225(5) eV line is found to be only 2.9(1) meV in contrast to its large spectral shift of 53.4(1) meV with respect to the lowest energy free exciton. The PL is attributed to exciton recombination at neutral Ge double donors on Zn sites involving transitions that leave the donor in an excited state.

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“…For n-type [2][3][4]7,8,39], doping with group-III elements (B, Al, Ga, In), as substitutional elements for Zn, has been attempted by many groups, resulting in high-quality, optically transparent, and highly conductive ZnO films as this substitution of divalent Zn 2+ by a trivalent ion generates an excessive free electron. Especially, Al-doped ZnO (AZO) thin films have attracted a considerable amount of interest due to their good electrical conductivity with reasonably low optical loss [46].…”

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confidence: 99%

AZO Thin Films by Sol-Gel Process for Integrated Optics

et al. 2013

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Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol, and monoethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of AZO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 and 2 at.% Al. The multi thin layers are deposited by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550 °C. Films display a strong preferential orientation, with high values for the Texture Coefficients (TC) of the (002) direction (TC (002) ≈ 3). The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated using X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), and Scanning Electronic Microscopy (SEM). Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that the films are monomodes at 632.8 nm with optical propagation optical losses estimated around 1.6 decibel per cm (dB/cm).

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Anionic and cationic substitution in ZnO

Cited by 93 publications

References 144 publications

First-principles study of optical properties in Ca-doped ZnO alloys

First-principles study of optical properties in Ca-doped ZnO alloys

Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted withAs73andGe73<

AZO Thin Films by Sol-Gel Process for Integrated Optics

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