Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide

Abstract

devices, [13] such as fin field-effect transistor effect based metal-oxide-semiconductor field-effect transistor [14,15] and insulated gate bipolar transistors (IGBTs), [16,17] which are used in high-speed railways [18,19] and electric vehicles. [20] Despite these advantages, the unique properties of SiC also raise several challenges for device fabrication. The SiC oxidation reaction isThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/smtd.202200329.

Zirconium-based cubic-perovskite materials for photocatalytic solar cell applications: a DFT study

“…[8][9][10][11][12][13][14][15] Additionally, the unresolved optoelectronic features, such as way of tall preoccupation and tunable bandgaps, slighter real crowds, leading opinion aw and comprehensive pre-occupation range, advanced exibility and lengthy control disperse as extents; and high optical absorption (HOA), [16][17][18] of metallic halide perovskites are highly attractive attention from investigators. [16][17][18][19][20][21][22][23][24] Therefore, as compared to other materials, these resources are abundant and affordable. Consequently, solar cells manufactured from these supplies will be more efficient than silicon-created solar cells.…”

Design and Simulated Electrical Properties of a Proposed Implanted-Epi Silicon 3D-Spherical Electrode Detector

“…With the continuous progress of the process in recent years, especially the achievements in the nanometer order of magnitude, the maturity and stability of etching have been improved [ 24 , 25 , 26 ]. This brings great convenience to the production of traditional 3D electrode detectors.…”

Catalytic nickel silicide as an alternative to noble metals in metal-assisted chemical etching of silicon

“…MACE fabricates various Si patterns such as wires, trenches, and holes from nano-to micro-scale regimes through a simpler process than other etching processes. [11][12][13][14][15] In MACE, Si is etched through two chemical reaction steps: oxidation and oxide removal. H 2 O 2 is a strong oxidant but does not directly oxidize Si in an HF/H 2 O 2 solution.…”