Anisotropic conductivity of disordered two-dimensional electron gases due to spin-orbit interactions

Chalaev, Oleg; Loss, Daniel

doi:10.1103/physrevb.77.115352

Cited by 18 publications

(25 citation statements)

References 21 publications

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“…6,13 Such interference effects have already been investigated in lateral transport in two-dimensional ͑2D͒ electron systems, [30][31][32] in spin relaxation in quantum wells 33 and quantum dots, 34 or in 2D plasmons. 35 The symmetry, which is imprinted in the tunneling probability becomes apparent when a magnetic moment is present.…”

Section: ͑6͒mentioning

confidence: 99%

Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions

2009

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The effects of the spin-orbit coupling ͑SOC͒ on the tunneling magnetoresistance of ferromagnet/ semiconductor/normal-metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance ͑TAMR͒ are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interference between Bychkov-Rashba and Dresselhaus SOCs that appear at junction interfaces and in the tunneling region. We also investigate the TAMR effect in ferromagnet/semiconductor/ferromagnet tunnel junctions. The conventional tunneling magnetoresistance ͑TMR͒ measures the difference between the magnetoresistance in parallel and antiparallel configurations. We show that in ferromagnet/semiconductor/ferromagnet heterostructures, because of the SOC effects, the conventional TMR becomes anisotropic-we refer to it as the anisotropic tunneling magnetoresistance ͑ATMR͒. The ATMR describes the changes in the TMR when the axis along which the parallel and antiparallel configurations are defined is rotated with respect to a crystallographic reference axis. Within the proposed model, depending on the magnetization directions in the ferromagnets, the interplay of Bychkov-Rashba and Dresselhaus SOCs produces differences between the rates of transmitted and reflected spins at the ferromagnet/semiconductor interfaces, which results in an anisotropic local density of states at the Fermi surface and in the TAMR and ATMR effects. Model calculations for Fe/GaAs/Fe tunnel junctions are presented. Finally, based on rather general symmetry considerations, we deduce the form of the magnetoresistance dependence on the absolute orientations of the magnetizations in the ferromagnets.

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Section: ͑6͒mentioning

confidence: 99%

Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions

2009

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“…In homogeneous systems, there is no difference between the linear Dresselhaus interaction and the Rashba term, as they are connected by a unitary transformation [30,31]. However, the Hamiltonian of the system with non-collinear magnetization is not invariant under spin rotation and thus, these spin-orbit couplings may result in different behaviors for the domain wall MR. Figure 4 shows the Rashba and the Dresselhaus strength dependence of the domain wall magnetoresistance when the incident energy is 0.1 eV.…”

Section: Modelingmentioning

confidence: 95%

Ballistic transport through a semiconducting magnetic nanocontact in the presence of Rashba and Dresselhaus spin–orbit interactions

Fallahi

Ghanaatshoar

2012

Physica Status Solidi (b)

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We study the magnetoresistance (MR) of a one-dimensional electron gas in a ferromagnetic semiconducting nanocontact containing an atomic-size domain wall, and in the presence of the Rashba and the Dresselhaus spin-orbit interactions. The MR is calculated in the ballistic regime, within the LandauerBüttiker formalism. It is shown that, the Dresselhaus spin-orbit interaction which is the result of bulk-induced inversion asymmetry makes a reduction in the domain wall MR. In contrast, the Rashba coupling may lead to a negative or positive change in the domain wall MR, depending on the Fermi energy and the lateral confinement potentials which can be induced by both parabolic lateral confinement and lateral gate potentials.

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“…It is not difficult to analyze analytically Eqs. (33) and (34) in the limiting case when the Fermi level is near the bottom of the band, ε F = −(1 + 2|b|) + ∆ε, by expanding in ∆ε. We get the following result:…”

Section: A Conductivity Tensormentioning

confidence: 99%

“…The conductivity tensor components G xx and G yy are studied in more details using direct numerical calculations of the integrals in Eqs. (33), (34). Below, we present the results of our calculations of conductivity for two regimes: when the Fermi energy is changed at a fixed magnetic field and when the magnetic field is changed while the Fermi level remains unchanged.…”

Section: A Conductivity Tensormentioning

confidence: 99%

Van Hove scenario of anisotropic transport in a two-dimensional spin-orbit coupled electron gas in an in-plane magnetic field

Sablikov

Tkach

2019

Phys. Rev. B

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We study electronic transport in two-dimensional spin-orbit coupled electron gas subjected to an in-plane magnetic field. The interplay of the spin-orbit interaction and the magnetic field leads to the Van Hove singularity of the density of states and strong anisotropy of Fermi contours. We develop a method that allows one to exactly calculate the nonequilibrium distribution function for these conditions within the framework of the semiclassical Boltzmann equation without using the scattering time approximation. The method is applied to calculate the conductivity tensor and the tensor of spin polarization induced by the electric field (Aronov-Lyanda-Geller-Edelstein effect). It is found that both the conductivity and the spin polarization have a sharp singularity as functions of the Fermi level or magnetic field, which occurs when the Fermi level passes through the Van Hove singularity. In addition, the transport anisotropy dramatically changes near the singularity.

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Anisotropic conductivity of disordered two-dimensional electron gases due to spin-orbit interactions

Cited by 18 publications

References 21 publications

Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions

Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions

Ballistic transport through a semiconducting magnetic nanocontact in the presence of Rashba and Dresselhaus spin–orbit interactions

Van Hove scenario of anisotropic transport in a two-dimensional spin-orbit coupled electron gas in an in-plane magnetic field

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