Anisotropic cutting mechanisms on the surface quality in ultra-precision machining of R-plane sapphire

Wang, Yinhui; Liang, Zhiqiang; Zhao, Wenxiang; Wang, Xibin; Wang, Hao

doi:10.1016/j.apsusc.2023.156868

Cited by 9 publications

(1 citation statement)

References 43 publications

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“…Single-crystal sapphire specimen (α-Al 2 O 3 ) are currently one of the most widely applied materials in the fields of defense, aerospace, microelectronics, and the medical domain [ 1 , 2 , 3 , 4 ] due to their excellent physicochemical properties and material characteristics, such as high hardness (Mohs hardness 9), high melting point (2045 °C), high light transmittance, high chemical stability, and high thermal stability [ 5 , 6 , 7 , 8 , 9 , 10 ]. Sapphire has not only become the most widely used substrate material for traditional LEDs [ 11 , 12 , 13 , 14 ] but also has a large number of applications in mini/micro-LEDs, which are currently very popular. With the rapid development of mini/micro-LEDs, the demand for high-quality sapphire substrates has increased at the same time.…”

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confidence: 99%

Research on the Preparation and Application of Fixed-Abrasive Tools Based on Solid-Phase Reactions for Sapphire Wafer Lapping and Polishing

Cao,

Zhou,

Wang

et al. 2023

Micromachines

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Single-crystal sapphire specimen (α-Al2O3) have been widely applied in the semiconductor industry, microelectronics, and so on. In order to shorten the production time and improve the processing efficiency of sapphire processing, an integrated fixed-abrasive tool (FAT) based on solid-phase reactions is proposed in this article. The optimal FAT composition is determined using a preliminary experiment and orthogonal experiments. The mass fraction of the abrasives is chosen as 55 wt%, and the mass ratio of SiO2/Cr2O3 is 2. Surface roughness Ra decreased from 580.4 ± 52.7 nm to 8.1 ± 0.7 nm after 150 min, and the average material removal rate was 14.3 ± 1.2 nm/min using the prepared FAT. Furthermore, FAT processing combined with chemical mechanical polishing (CMP) was shortened by 1.5 h compared to the traditional sapphire production process in obtaining undamaged sapphire surfaces with a roughness of Ra < 0.4 nm, which may have the potential to take the place of the fine lapping and rough polishing process.

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