Anisotropic dependence of radiation from excitons in Ga2O3/MoS2heterostructure

Deng, Zexiang

doi:10.1039/d2ra06139b

Cited by 2 publications

(3 citation statements)

References 42 publications

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“…Comparing Eqs. (3,4) and (5,6), we notice that if the incident light propagates in plane, the Raman intensity is independent of the angle of incident light (f). However, when the incident light propagates out of plane, the Raman intensity depends on the angle of the incident light, and we will discuss this point in the next sections.…”

Section: Methodsmentioning

confidence: 99%

“…Selenium nanostructure-based semiconductors have a variety of potential applications in the fabrication of many highperformance devices. [1,2] Among them, as the family member of group III monochalcogenides (GaS, GaSe, InS, and InSe), few layers InSe have received a lot of interest, [3][4][5] due to the excellent carrier mobility, abnormal magneto-optic effect, [6] efficiency of splitting water, [7,8] thermal conductivity and significant band gap tunability. Recently, two-dimensional (2D) fewlayer InSe has been successfully synthesized, and exhibits good photothermal conversion efficiency, [3,[9][10][11][12][13][14][15][16][17] high mobility, improved exciton dissociation, decreased charge recombination, optical properties, [18] improved light harvesting, [19] and potential applications of multilayer InSe flake based FETs, [20] compared to other 2D materials.…”

Section: Introductionmentioning

confidence: 99%

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Angle‐Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study

Deng

2024

ChemPhysChem

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Two crystal polymorphs of GaO consisting of GaO‐H and GaO‐T monolayers are proposed in this study. Based on the density functional theory calculations, the phonon dispersion demonstrates that both GaO‐H and GaO‐T monolayers could be stable. The band gaps of GaO‐H and GaO‐T monolayers are 1.51 and 1.43 eV, respectively. When an external electric field is applied, the band gaps of GaO monolayers are reduced dramatically, down to 0.13 eV with the field of 0.7 V/Å. Because of the decreased symmetry of C3v under an external electric field, more peaks of Raman spectra can be obtained. The angle‐dependent Raman spectra of A and A of GaO‐H monolayer, and A11g and A21g of GaO‐T monolayer are discussed seperately, with the incident lasers of 488 and 532 nm. Additionally, the Raman intensity distribution shows that the incident light should be parallel to the plane of the GaO monolayer to obtain more comparable Raman spectra. These investigations of the crystal polymorphs of GaO monolayers may guide the experimental investigations of GaO monolayers and potential optoelectronic applications.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Angle‐Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study

Deng

2024

ChemPhysChem

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“…Recently, in 2023, Leblanc et al reported a WS 2 /Ga 2 O 3 heterostructure with a rectification ratio up to 10 6 . Despite significant progress being made in device development, the band alignment and interlayer carrier transfer mechanism of a variety of TMDs/Ga 2 O 3 heterostructures still needs in-depth exploration, particularly with regard to the direct observation of their broadband absorption spectra through experimental methods. − …”

Section: Introductionmentioning

confidence: 99%

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga₂O₃ Hybrid-Dimensional Heterostructures

Zhu,

Liu,

Sheng

et al. 2024

ACS Appl. Mater. Interfaces

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Recently, various transition metal dichalcogenides (TMDs)/Ga 2 O 3 heterostructures have emerged as excellent candidates for the development of broadband photodetection, exhibiting various merits such as broadband optical absorption, efficient interlayer carrier transfer, a relatively simple fabrication process, and potential for flexibility. In this work, vertically stacked MoSe 2 /Ga 2 O 3 , WS 2 /Ga 2 O 3 , and WSe 2 /Ga 2 O 3 heterostructures were experimentally synthesized, all exhibiting broadband light absorption, spanning at least from 200 to 800 nm. The absorption coefficients of these TMDs/Ga 2 O 3 heterostructures are significantly improved compared to those of individual Ga 2 O 3 films. The superior performance can be attributed to the type-I band alignment and efficient interlayer carrier transfer, which result from various band offsets along with the different doping conditions of the TMD layers, leading to distinct photoluminescence (PL) emission properties. Through a detailed analysis of the excitation-power-dependent PL spectra, we offer an in-depth discussion of the interlayer carrier transfer mechanism in the TMDs/Ga 2 O 3 heterostructures. Regarding interlayer coupling effects, the shift of the E F of TMD layers plays a crucial role in modulating their trion emission properties. These findings suggest that these three TMDs/ Ga 2 O 3 heterostructures have great potential in broadband photodetection, and our in-depth physical mechanism analysis lays a solid foundation for a new device design.

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Anisotropic dependence of radiation from excitons in Ga₂O₃/MoS₂heterostructure

Abstract: The anisotropic dependence of radiation arising from exciton recombination in the Ga2O3/MoS2 heterostructure is investigated, using density functional theory and the Bethe–Salpeter equation.

Cited by 2 publications

References 42 publications

Angle‐Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study

Angle‐Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga₂O₃ Hybrid-Dimensional Heterostructures

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Anisotropic dependence of radiation from excitons in Ga2O3/MoS2heterostructure

Abstract: The anisotropic dependence of radiation arising from exciton recombination in the Ga2O3/MoS2 heterostructure is investigated, using density functional theory and the Bethe–Salpeter equation.

Cited by 2 publications

References 42 publications

Angle‐Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study

Angle‐Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga2O3 Hybrid-Dimensional Heterostructures

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Anisotropic dependence of radiation from excitons in Ga₂O₃/MoS₂heterostructure

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga₂O₃ Hybrid-Dimensional Heterostructures