In this paper we report on a detailed photoluminescence study of a series of GaAs/AIAs type II quantum well structures. In these structures the thickness of the GaAs layers was kept constant at 25 8, and the thickness of the AlAs layers was varied between 28 and 114 A. As the AlAs layer thickness was increased we observed a large change in the relative strengths of the zero-phonon and phonon-assisted type II exciton recombinations. We have interpreted this phenomenon as being due to a change in the nature of the lowest lying AlAs electron state from X , (k perpendicular to [OOl]) to X, (k parallel to [OOl]) as the AlAs thickness was decreased, where [OOl] is the growth direction. This changeover is due to the competing effects of electron confinement and strain produced by the small but finite lattice mismatch between GaAs and AIAs. We have estimated the strain splitting of the different X states to be 23 meV.Calculations using this figure along with an envelope function treatment of the effects of electron confinement predict that the lowest confined X, and X , , states should cross at an AlAs thickness of the order of 60 A. For the samples with the thickest AlAs layers (94 and 114 A) we were able to resolve two zero-phonon lines which we attribute to the different X states, the measured splittings are in good agreement with the calculations.