2011
DOI: 10.1016/j.carbon.2010.12.014
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Anisotropic electrical conduction of vertically-aligned single-walled carbon nanotube films

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Cited by 33 publications
(27 citation statements)
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“…[44] The key importance to growing a vertically aligned SWNT (VA-SWNTs) array is ensuring that the catalysts are small, dense, and efficient ( Figure 1e). Thanks to these geometric advantages, many elegant studies have been conducted using this system, including demonstration of growth kinetics by ex situ or in situ monitoring [48,49] and anisotropic optical/electronic properties, [50,51] manipulation/ patterning of the CNT films, [52][53][54] modulation of the SWNT structure, [55][56][57] and fabrication of a high-efficiency filter. As a follow-up of this work, "super-growth" process, in which enhanced growth efficiency was achieved by incorporating a trace amount of water into ethylene CVD (Table 1: Process I), was reported.…”
Section: Wwwadvancedsciencenewscommentioning
confidence: 99%
“…[44] The key importance to growing a vertically aligned SWNT (VA-SWNTs) array is ensuring that the catalysts are small, dense, and efficient ( Figure 1e). Thanks to these geometric advantages, many elegant studies have been conducted using this system, including demonstration of growth kinetics by ex situ or in situ monitoring [48,49] and anisotropic optical/electronic properties, [50,51] manipulation/ patterning of the CNT films, [52][53][54] modulation of the SWNT structure, [55][56][57] and fabrication of a high-efficiency filter. As a follow-up of this work, "super-growth" process, in which enhanced growth efficiency was achieved by incorporating a trace amount of water into ethylene CVD (Table 1: Process I), was reported.…”
Section: Wwwadvancedsciencenewscommentioning
confidence: 99%
“…Our study highlights that contact resistances depend on the contact quality, which will be determined by the electronic structure of the substrate or coating material and its wettability with carbon (dening the tunneling barrier). While it is widely known that low-resistance end contacts are found between CNTs and metallic catalysts 17,32,34,35,51,[66][67][68][69] (e.g., a bond as strong as 7.6 eV per bond could be formed between Co catalyst and SWCNT 70 ), our results show that transplantation of CNTs (e.g., on Ni at 400 C) can still enable low resistively end contacts much below the typical CVD temperature (750 C). These ndings highlight that VACNT arrays can be transferred to substrates and devices on which direct CVD growth of the CNTs is not possible (e.g.…”
Section: Resultsmentioning
confidence: 53%
“…The linearity of these curves indicates the Ohmic contact between CNT electrodes and the silver paste. On the other hand, if taking the macroscopic volume of the whole circuit into consideration, the nominal resistivities of these circuits were calculated to be on the scale of 10 -3 Ωm, which is comparable to that of VACNT carpet measured on the longitudinal direction [7]. The high packing density of CNTs and the entanglement between CNTs contribute to the intertube conduction along the CNT circuits.…”
Section: Resultsmentioning
confidence: 99%