2004
DOI: 10.1016/j.vacuum.2004.07.063
|View full text |Cite
|
Sign up to set email alerts
|

Anisotropic etching of silicon in SF6 plasma

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
8
0
2

Year Published

2011
2011
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 16 publications
(10 citation statements)
references
References 12 publications
0
8
0
2
Order By: Relevance
“…One of the gases used to form these active plasma species is sulfur hexafluoride (SF 6 ), and the rapid and selective etching of silicon in pure sulfur hexafluoride and its mixtures with inert gases and molecular gases (O 2 , CF 4 , CHF 3 , …) has been demonstrated. [17][18][19][20][21][22][23][24][25][26][27] Si (100) surfaces can be textured using a mixture of SF 6 /O 2 as a result of the chemical reactivity of fluorine species and the significant role of SiOxFy masking species. 27 In a previous work, 28 we investigated the effect of the oxygen ratio in the SF 6 /O 2 plasma mixture on the formation of Si nanostructures, where we reported a low reflectance (0.01%), a defect-based "violet" PL from the obtained Si nanostructures, a fast response to humidity (1 s of time), and the spectral response of the formed nanostructures.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…One of the gases used to form these active plasma species is sulfur hexafluoride (SF 6 ), and the rapid and selective etching of silicon in pure sulfur hexafluoride and its mixtures with inert gases and molecular gases (O 2 , CF 4 , CHF 3 , …) has been demonstrated. [17][18][19][20][21][22][23][24][25][26][27] Si (100) surfaces can be textured using a mixture of SF 6 /O 2 as a result of the chemical reactivity of fluorine species and the significant role of SiOxFy masking species. 27 In a previous work, 28 we investigated the effect of the oxygen ratio in the SF 6 /O 2 plasma mixture on the formation of Si nanostructures, where we reported a low reflectance (0.01%), a defect-based "violet" PL from the obtained Si nanostructures, a fast response to humidity (1 s of time), and the spectral response of the formed nanostructures.…”
Section: Introductionmentioning
confidence: 99%
“…Plasma etching is used in the manufacture of semiconductor devices, 13–16 a process in which fluorine‐bearing radicals and ions form in the discharge plasma. One of the gases used to form these active plasma species is sulfur hexafluoride (SF 6 ), and the rapid and selective etching of silicon in pure sulfur hexafluoride and its mixtures with inert gases and molecular gases (O 2 , CF 4 , CHF 3 , …) has been demonstrated 17–27 …”
Section: Introductionmentioning
confidence: 99%
“…As an alternative technique, there is the plasma cleaning technology, which has been the object of study of several works [2][3][4][5][6][7] and shown to be an efficient technique in degradation of compounds with different organic functions. Plasma cleaning technologies are already being used in the cleaning of inputs in the semiconductor sectors [8], food industry [9], medical [10,11], sputtering printed circuit boards [12], surface modification [13][14][15][16] and nitriding [17,18]. However, due to the complexity of the plasma environment, it is necessary to obtain more information about the influence of the different species on the degradation of organic functions [19].…”
mentioning
confidence: 99%
“…A corrosão por plasma (SF6) [177] é uma técnica comumente usada em aplicações envolvendo estruturas com áreas relativamente grandes devido à alta taxa de corrosão do silício. No plasma SF6+O2 [174,178], ocorre competição entre os átomos de F e O pelos sítios ativos da superfície de Si, e a corrosão não ocorre pela remoção contínua da camada mais externa de Si, mas sim pela formação de uma fase intermediária bastante espessa e desordenada contendo as espécies SiF, SiF2, SiF3 e SiF4. A reação global deste processo pode ser descrita pela equação a seguir:…”
Section: Determinação Do Ph Em Intestino Médio De Lepidópterasunclassified
“…Por fim, uma modificação também foi realizada no procedimento de corrosão da placa de Si, empregando-se corrosão por PCE (plasma chemical etching [178]) usando plasma de SF6. Esta é uma metodologia bastante utilizada para a obtenção estruturas MEMS devido à sua alta taxa de corrosão do silício.…”
unclassified