Anisotropic etching of silicon in a complexant redox alkaline system

Moldovan, Carmen; Iosub, Rodica; Dascǎlu, D.; Nechifor, Gheorghe

doi:10.1016/s0925-4005(99)00124-0

Cited by 39 publications

(29 citation statements)

References 6 publications

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“…This roughness issue may cause potential problems for the fabrication of three-dimensional and movable structures for MEMS, where smooth etched surfaces are desired. The addition of complexants is suggested in order to reduce the etched surface roughness [12,13]. The addition of IPA as a performance enhancer to the etching solution is considered here and a study was conducted to investigate roughness behavior of the etched surface.…”

Section: Etch Rate Studymentioning

confidence: 99%

“…The etching mechanism using hydroxide ions has been widely discussed in literature [1,2,12]. Zubel and Kramkowska studied the smoothness of etched (1 0 0) silicon surface in IPA based etchants [19].…”

Section: Etched Surface Smoothening Mechanismmentioning

confidence: 99%

“…A notable development in the silicon anisotropic etching processes has been the use of special additives in order to alter the etching behavior and improve the smoothness of the etched surfaces [10][11][12][13]. Isopropyl alcohol (IPA) has been known as a very effective additive to increase the smoothness of silicon etched in KOH solution [14,15].…”

Section: Introductionmentioning

confidence: 99%

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Smooth etching of silicon using TMAH and isopropyl alcohol for MEMS applications

Sundaram

Vijayakumar

Subramanian

2005

Microelectronic Engineering

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Section: Etch Rate Studymentioning

confidence: 99%

Section: Etched Surface Smoothening Mechanismmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Smooth etching of silicon using TMAH and isopropyl alcohol for MEMS applications

Sundaram

Vijayakumar

Subramanian

2005

Microelectronic Engineering

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“…The complexant B (calix [4]arene) has a tensioactive, surfactant character and has phenol groups (similar to pyrocatechol) that participate in removing Si(OH)4 from the surface by complexing in conformity with the general mechanism. The extremely favorable effect of calix [4]arene on the silicon etch rate is done to its triple effect: V ions complexant, tensioactive character and Si(OH)4 complexant.…”

Section: Ow +A (÷G) -) Ow +M a (Or G)mentioning

confidence: 99%

Silicon hillocks elimination using a complexant redox alkaline system

et al. 1999

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This paper presents the results from the investigation of the chemical anisotropic etching of single-crystal silicon <100>inthe following solutions: KOH (or NaOH, LiOHH20), K3[Fe(CN)6} 0. IM, K4Fe(CN)6] •3H20 0. IM, KNO3 0. 1M and/or complexant added. The complexants added in KOH solution were: Calix[4]arenes, Phenols and Ether Dibenzo 1 8 Crown 6.The results using also NaOH or LiOH•H20 and complexants are presented. The reaction mechanism and the hillocks formation and elimination are analysed. The results allow us to use the redox system and/or the organic complexants, to monitor the etching process, to obtain a smooth silicon surface, almost free of hillocks, to utilize the usual mask material resistant at the new etchants.

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“…Different kinds of additives (e.g. redoxsystem or complexants, oxidizing agent, surfactants, and metal impurities) [13][14][15][16][17] are Open Access *Correspondence: prem@iith.ac.in MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, India added into KOH to get high speed etching and the alcohols/surfactants are incorporated to improve the surface morphology [18][19][20][21][22][23][24]. Moreover, etching at the boiling point of the etchant [11,25], microwave irradiation of the etchant [26], ultrasonic agitation of the etchant [27] have been employed to increase the etch rate.…”

Section: Introductionmentioning

confidence: 99%

Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

Rao

Swarnalatha

Pal

2017

Micro and Nano Syst Lett

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Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH 2 OH) in 20 wt% KOH solution. The concentration of NH 2 OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH 2 OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH 2 OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO 2 .

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Anisotropic etching of silicon in a complexant redox alkaline system

Cited by 39 publications

References 6 publications

Smooth etching of silicon using TMAH and isopropyl alcohol for MEMS applications

Smooth etching of silicon using TMAH and isopropyl alcohol for MEMS applications

Silicon hillocks elimination using a complexant redox alkaline system

Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

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