Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

Tanaka, Satoru; Morita, Kouhei; Hibino, Hiroki

doi:10.1103/physrevb.81.041406

Cited by 106 publications

(84 citation statements)

References 23 publications

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“…Older graphene sheets are lift up by the formation of the new graphene sheet, and the oldest graphene sheet remains on the topmost. This mechanism is consistent with the experimental observations [75,76]. The experiment further revealed that this mechanism is also applicable to the C-face as well as the Si-face [76].…”

Section: Discussion On Quasi-stable Buffer Layer Structuresupporting

confidence: 80%

Theoretical Study of Graphene on SiC(11-20) a-Face

Kageshima

Hibino

2016

e-J. Surf. Sci. Nanotech.

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Atomic structures and electronic states of epitaxial graphene on the SiC(1120) a-face are studied based on the first-principles calculation. It is found that the surface can have two types of the surface, the stable quasi-freestanding structure and the quasi-stable buffer layer structure. The neutral nature, the low interface state density, and the absence of large interface dipoles suggest that the epitaxial graphene on the SiC(1120) a-face is appropriate for studying the physical properties of carrier transport. It is also proposed that the existence of the buffer layer is directly related with the epitaxial relation of the formed graphene with the SiC substrate.

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Section: Discussion On Quasi-stable Buffer Layer Structuresupporting

confidence: 80%

Theoretical Study of Graphene on SiC(11-20) a-Face

Kageshima

Hibino

2016

e-J. Surf. Sci. Nanotech.

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“…[28][29][30][31][32][33] In standard processes, vicinal SiC surfaces are gas etched in the H 2 atmosphere. Depending on the duration of this stage, the partial erosion of the material at the steps occurs which may lead to the formation of macrosteps 28,29 or a significant modification of the step shapes. 30 Typically, prepared SiC samples are annealed in a neutral atmosphere at a very high temperature which leads to graphitization that begins at the steps.…”

Section: Introductionmentioning

confidence: 99%

Role of structure of C-terminated4H-SiC(0001¯) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies

et al. 2012

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Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(0001 ) face of a 4H-SiC substrate, are investigated using microscopic methods.Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(0001 ) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600°C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face.At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp 2 bonded configuration, liberating Si atoms in a) Electronic mail: jolanta.borysiuk@fuw.edu.pl 2 barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers.These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface.

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“…Currently, graphene can be prepared by different methods such as mechanical cleavage or exfoliation [2], chemical reduction of graphite oxide [3], epitaxial growth by SiC thermal graphitization in vacuum [4] or in an Ar atmosphere [5] and chemical vapour deposition (CVD) on transition metals [6]. Very promising is the synthesis of graphene on SiC substrates at a relatively low temperature [7] based on the carbon segregation from a metal layer saturated by carbon.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Graphene on Ni/SiC Structure

Macháč

Hrebicek

2016

Journal of Electrical Engineering

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-graphene is a promising material with excellent electrical, thermal, optical and mechanical properties. Therefore, it is a material of high relevance for various applications in many branches of technique. Graphene has received much attention recently in scientific community. The contribution reports formation and characterization of few-layer graphene (FLG) films on a SiC substrate from nickel silicide supersaturated with carbon by annealing at a favourable low temperature.

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Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

Cited by 106 publications

References 23 publications

Theoretical Study of Graphene on SiC(11-20) a-Face

Theoretical Study of Graphene on SiC(11-20) a-Face

Role of structure of C-terminated4H-SiC(0001¯) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies

Synthesis of Graphene on Ni/SiC Structure

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