2003
DOI: 10.1016/s0921-5107(03)00146-6
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Anisotropic magnetic centers and conduction electrons in hydrogenated microcrystalline silicon

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Cited by 11 publications
(7 citation statements)
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“…Si:H have a similar feature to those of a-Si:H rather than those of microcrystalline Si:H [2,11], light-induced defect creation in pm-Si:H may occur in a relaxed amorphous network. Accordingly, hydrogen content in this network affects the lightinduced defect creation.…”
Section: Discussionmentioning
confidence: 96%
“…Si:H have a similar feature to those of a-Si:H rather than those of microcrystalline Si:H [2,11], light-induced defect creation in pm-Si:H may occur in a relaxed amorphous network. Accordingly, hydrogen content in this network affects the lightinduced defect creation.…”
Section: Discussionmentioning
confidence: 96%
“…The density of these states is closely related to the electronic quality of the material [3]. A number of experimental results indicate the existence of two resonances in lc-Si:H at around g = 2.0043 and g = 2.0052 with a line width of about 4-8 G, which have been suggested to arise from different defects in different microscopic environments giving the observed asymmetric ESR signal of lc-Si:H. Alternatively it has been proposed that the signal is due to a P b -like defect with a pronounced axial symmetric g-tensor [11][12][13]. So far no conclusive interpretation exists.…”
Section: Introductionmentioning
confidence: 88%
“…In a-Si:H an ESR line is observed with a g-value of 2.0055 and a line width of DH pp = 7 G. Identification of this resonance with Si dangling bonds (db) is widely accepted. ESR studies on lc-Si:H do show signals at g = 2.0040 À 2.0053, significantly shifted from the db g-value in a-Si:H and which are considerably affected by preparation conditions, structure composition and post-preparation treatment [1][2][3][4][5][6][7][8][9][10][11][12][13]. The density of these states is closely related to the electronic quality of the material [3].…”
Section: Introductionmentioning
confidence: 98%
“…The resonance in lc-Si:H is observed at g = 2.0043-2.0052 with a line width of 6-8 G. The parameters of the line depend on the deposition conditions, material structure and sample history [4,5]. Two interpretations for the ESR signal in lcSi:H are mostly discussed: a superposition of dangling bonds in different environment (db1 and db2) [6,7] or a powder spectrum of anisotropic defects [8][9][10].…”
Section: Introductionmentioning
confidence: 99%