Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

Domagała, J.; Bąk‐Misiuk, J.; Adamczewska, J.; Żytkiewicz, Z. R.; Dynowska, E.; Trela, J.; Dobosz, D.; Janik, E.; Leszczyński, M.

doi:10.1002/(sici)1521-396x(199901)171:1<289::aid-pssa289>3.0.co;2-2

Cited by 14 publications

(5 citation statements)

References 9 publications

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“…We observed a larger density, by a factor of about 30%, of misfit dislocations of the βtype, aligned along the [110] direction, as compared to that of α dislocations, aligned along the [ 110] direction, which was in contradiction to earlier results [3][4][5]. The reason for this is, most probably, the p-type doping of the epitaxial layers, in which the glide velocity of β-type dislocations is higher than that of α-type dislocations [2].…”

Section: Misfit Dislocations and Surface Morphologycontrasting

confidence: 99%

“…In fact, a distinct difference, dependent on dopant impurities, between the glide velocities of the two types of dislocations in several III-V compound semiconductors was revealed [2]. This difference causes an asymmetry in the formation of the two types of misfit dislocations resulting in an initially anisotropic relaxation of epitaxial layers [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

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Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures

Yastrubchak

Wosiński

Domagała

et al. 2003

J. Phys.: Condens. Matter

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Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch have been studied by means of atomic force microscopy and high-resolution x-ray diffractometry. Additionally, electron-beam induced current in a scanning electron microscope and transmission electron microscopy have been employed to investigate misfit dislocations formed at the (001) heterostructure interface. The measurements revealed a direct correlation between the surface crosshatched morphology and the arrangement of interfacial misfit dislocations. The reciprocal lattice mapping and the rocking curve techniques employed for the samples aligned with either the [ 110] or the [110] crystallographic direction perpendicular to the diffraction plane revealed anisotropic misfit strain relaxation of the InGaAs layers. This anisotropy results from an asymmetry in the formation of the α and β types of misfit dislocations oriented along the [ 110] and [110] directions, respectively, which differ in their core structures. The misfit strain anisotropy causes a distortion of the unit cell of the layer and lowers its symmetry to orthorhombic.

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Section: Misfit Dislocations and Surface Morphologycontrasting

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures

Yastrubchak

Wosiński

Domagała

et al. 2003

J. Phys.: Condens. Matter

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“…The linear density of misfit dislocations estimated from the TEM, EBIC and AFM results for the both GaAs/InGaAs heterostructures was about 10 4 cm -1 . In the both heterostructures the density of misfit dislocations of the β-type, aligned along the [110] direction, was larger, by a factor of 30-40%, as compared to that of α dislocations, aligned along the ] 10 1 [ direction, which was in contradiction to earlier results [1,7,14]. The reason of it is, most probably, the p-type doping of the epitaxial layers, in which the glide velocity of β-type dislocations is higher than that of α-type dislocations [6].…”

Section: Resultscontrasting

confidence: 85%

Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures

Yastrubchak

Wosiński

Domagała³

et al. 2004

DDF

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Partially relaxed III–V heterostructures: GaAs/InGaAs and InP/InAlAs/InGaAs, with a small lattice mismatch, grown using molecular beam epitaxy under compressive or tensile misfit stress at the (001) interface, have been investigated by means of high-resolution X-ray diffractometry, atomic force microscopy and generalized ellipsometry. Additionally, transmission electron microscopy and electron-beam induced current in a scanning electron microscope have been employed to reveal misfit dislocations at the heterostructure interface. Chemical etching was used to determine polarity of the crystals and threading dislocation densities in the epitaxial layers. Our findings are interpreted in terms of the dependent on growth conditions, material’s composition and doping glide velocities of two types of misfit dislocations: α and β, differing in their core structure and lying along two orthogonal 〈110〉 crystallographic directions at the (001) interface.

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“…Variations of RC FWHM, (in our case, increase from 0.8 ° to 2.2 ° for symmetric reflections in the two orthogonal sample position twisted around the surface normal) can occur in heteroepitaxial systems and were associated previously with the misfit dislocation anisotropy in characteristic directions. 22,23 Obviously the signal from a very thin layer always introduces additional broadening of the reflection curves, especially 2θ/θ one and RSM in the radial direction with respect to q [see Fig. 4a and Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Variations of RC FWHM, (in our case, an increase from 0.8 to 2.2°for symmetric reflections in the two orthogonal sample positions twisted around the surface normal) can occur in heteroepitaxial systems and were associated previously with the misfit dislocation anisotropy in characteristic directions. 22,23 Obviously the signal from a very thin layer always introduces additional broadening of the reflection curves, especially the 2θ/θ one and RSM in the radial direction with respect to q (see Figures 4a and 5a,b). In our case, this effect on the FWHM of the 2θ/θ peak (see Figure 4) for the 0012 peak amounts to about 0.7°(006 reflection simulations for an ideal 18.1 nm thick InAs layer grown on GaAs(001); simulation program PANalytical Epitaxy 4.3a) which is about 3 times smaller than FWHM (2.02°) of the experimental TaAs peak.…”

Section: ■ Introductionmentioning

confidence: 98%

Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates

Sadowski

Domagała

Zajkowska

et al. 2022

Crystal Growth & Design

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Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001) substrate and TaAs epilayer no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected with transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in-situ reflection high energy electron diffraction images indicates that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure.

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Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

Cited by 14 publications

References 9 publications

Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures

Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures

Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures

Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates

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