Using in-situ Raman scattering from phosphorene channel in an electrochemically topgated field effect transistor, we show that its phonons with A g symmetry depend much more strongly on concentration of electrons than that of holes, while the phonons with B g symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving π and σ bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is * To whom correspondence should be addressed † Department of Physics, Indian Institute of Science, Bangalore 560012, India ‡ Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India ¶ Contributed equally to this work 1 arXiv:1603.02941v1 [cond-mat.mes-hall] 9 Mar 2016 a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.