Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn_1-xMg_xO multiple quantum wells grown on LiGaO₂ substrate

Abstract

The temperature-dependent polarized photoluminescence spectra of nonpolar ZnO samples were investigated by 263 nm laser. The degree of polarization (DOP) of m-plane quantum wells changes from 76% at 10 K to 40% at 300 K, which is much higher than that of epilayer. The strong anisotropy was presumably attributed to the enhanced confinement effect of a one-dimension confinement structure formed by the intersection of quantum well and basal stacking fault. The polarization of laser beam also has an influence on the DOP. It is assumed that the luminescence polarization should be affected not only by the in-plane strains but also the microstructural defects, which do modify the electronic band structure.

Probing the chirality and optical activity of organic molecules through the anisotropic photoluminescence of porous silicon

“…23 This technique has been used in the development of new applications for chiral molecules, such as in novel drugs, analytical chemistry, and materials science. [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38] The importance of studying the PL anisotropy of porous silicon (PSi) has been highlighted in previous research studies. [39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55] The heterogeneous nature of the mesoporous structure of PSi causes variations in its optical characteristics along different directions; these variations are manifested in FA.…”

“…23 This technique has been used in the development of new applications for chiral molecules, such as in novel drugs, analytical chemistry, and materials science. 24–38…”