Anisotropic resistivity in pulsed-laser deposited Bi2Sr2CaCu2O8+δ films

Li, S.T.; Ritzer, Alfons; Proyer, S.; Stangl, E.; Bäuerle, D.; Reschauer, N.

doi:10.1016/b978-0-444-82412-7.50129-2

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2000

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“…Bi-2212 films were deposited by pulsed laser deposition (PLD) on 0°, 12°, 15° and 20° [100] vicinal SrTiO 3 substrates. The experimental set-up is described in [3,4]. For deposition, stoichiometric Bi-2212 targets [5] and a UV KrF-eximer laser (λ = 248 nm, Φ~3.7J/cm 2 , laser spot size on the target ~1mm 2 , target-substrate distance = 30mm, laser pulse duration and repetition rate were 25ns and 1 Hz respectively) were used.…”

Section: Introductionmentioning

confidence: 99%

HREM of High‐T _c Bi‐2212 Superconducting Films on Vicinal Substrates

Connolly

Svetchnikov

Zandbergen

et al. 2000

Interface Controlled Materials

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High resolution electron microscopy has been used to investigate the defect structure -both at the film/substrate interface and within the film -induced in Bi 2 Sr 2 CaCu 2 O 8 (Bi-2212) films deposited on vicinal (001) SrTiO 3 substrates. The deposited films were approximately 20 -100 nm thick. For vicinal angles less than ∼15°, the Bi-2212 films were observed to grow exclusively c-axis oriented, with various defects such as antiphase boundaries, stacking faults, and steps at the film surface. For the 20° vicinal sample, small areas of the film were observed to have their c-axis perpendicular to the vicinal surface. Crystal misorientations and microstructure for different vicinal angles are discussed.

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Section: Introductionmentioning

confidence: 99%