Anisotropic size effects in semiconductors and semimetals

Magnetoresistance in Two-Component Systems

“…The latter may vary from hundreds of nanometers to centimeters depending on material properties and temperature. The role of the quasiparticle recombination in "anisotropic size effects" in narrow band semiconductors and semimetals was stressed long ago by Rashba and co-workers [45]. A related phenomenon was suggested recently to be responsible for a negative Coulomb drag in graphene [46].…”

Magnetoresistance in the in-plane magnetic field induced semimetallic phase of inverted HgTe quantum wells

“…[3] that can easily exceed the system width. In this case, a non-trivial magnetoresistance emerges naturally due to skin effects on the scale of the recombination length [12].…”

Forgotten mechanism of nonlinearity in the theory of hot electrons

“…It is well known, that the fundamental reason for nonlinearity of a current-voltage characteristic (CVC) of a homogeneous semiconductor in strong electrical fields is the change of the mean carrier energy (carrier heating). The classical theory of the hot carrier transport was developed a long time ago and rather explicitly [1][2][3][4][5] . Thus, as a rule, it was considered, that the nonlinearity of the CVC is related to the carrier mobility alteration because of the change of carrier mean energy.…”

“…where ε g is the bandgap width. Thus, near the indicated concentration the additional contribution to the conductivity change is negligibly small and heating effects are described by existing theories [1][2][3][4][5] . At low temperatures or, that is equivalent, heavily doping (N t ≫ n 1 ) we come back to expression (9).…”