Anisotropic surface structure in ordered strained InGaP

Hasenöhrl, S.; Kúdela, R.; Novák, J.; Tuomi, T.; Knuuttila, L.

doi:10.1016/s0921-5107(01)00868-6

Cited by 9 publications

(14 citation statements)

References 21 publications

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“…Thus, the maximum of the magnitude of strain during the sample cooling from the growth temperature to RT is minimized in sample A. Similar results for MD-free epilayer growth have been demonstrated in the GaInP on GaAs material system when the GaInP is lattice matched to GaAs at the growth temperature [6]. It appears that the MDs are easily formed during the growth process itself at high temperature, rather than when cooling the sample back to RT.…”

Section: Resultssupporting

confidence: 71%

“…InP hillocks similar in their appearance to those typical for GaInP/GaAs layers [4][5][6][7] were also found in the GaInP layers grown on GaAs/Ge substrates. The InP hillocks had a surface density of % 2000 cm À2 , and they were observed to be very homogenous in their faceted form, crystallite orientations and size ð % 6 Â 12 mm 2 Þ.…”

Section: Discussionmentioning

confidence: 52%

“…Some differences in the shapes of the X-ray maxima arising from the asymmetric strain is observed in RSMs of Figs. 3 and 4, but due to the relatively small strain in samples A and B, the differences in peak shapes between Figs Similar hillocks in Ga 1Àx In x P=GaAs with 0:388 r x r0:552 have been reported in [6], and they are a well-known problem in GaInP epitaxy [4,5,7]. However, it is possible to grow hillock-free GaInP layers using PH 3 as P precursor, if the PH 3 flow is modulated during the MOVPE growth [17].…”

Section: Resultsmentioning

confidence: 68%

“…The GaAs/ Ge structures used as substrates in this work are of a high crystal quality and have been previously studied in [2,3]. The main idea for using the GaAs/Ge substrates is to apply prior knowledge about growing GaInP on GaAs [4][5][6][7] to Ge substrates with only minor modifications. Also, problems with anti-phase domains (APD) appearing in GaAs epilayers on Ge were already solved in a previous publication [2], and by using GaAs/Ge substrates instead of plain Ge substrate the possible problem of APD formation on GaInP/Ge interface is probably avoided.…”

Section: Introductionmentioning

confidence: 99%

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Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Lankinen¹,

Knuuttila²,

Kostamo³

et al. 2009

Journal of Crystal Growth

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In x P layers are grown on GaAs/Ge substrates by metalorganic vapor phase epitaxy and studied by means of synchrotron X-ray topography and high-resolution X-ray diffractometry. Misfit dislocations (MDs) in Ga 0:5094 In 0:4906 P epilayers having a þ 3:8 Â 10À4 lattice mismatch to GaAs/Ge substrates at room temperature (RT) are observed. Ga 0:4995 In 0:5005 P epilayers having a lattice mismatch of À3:5 Â 10 À4 to the GaAs/Ge substrates at RT are shown to be free of MDs, which is explained by the different linear thermal expansion coefficient of the epilayer from that of the substrate material compensating the lattice mismatch at the growth temperature of 610 3 C. The Matthews-Blakeslee model for critical thickness was matched to the observed MD pattern in the samples. Additionally, faceted InP hillocks and strain fields beneath them are observed within the GaInP layers. The observed MDs, which are most likely of the 60 3 mixed /1 0 1Sf1 1 1g type, originate at the hillocks.

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Section: Resultssupporting

confidence: 71%

Section: Discussionmentioning

confidence: 52%

Section: Resultsmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Lankinen¹,

Knuuttila²,

Kostamo³

et al. 2009

Journal of Crystal Growth

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“…The deviation from the simulated reflectivity values is likely to be caused by changes in the sample structure after 2,100 s of growth. This theory is also supported by the observation that the oscillations in curves C and D disappear at 2,100 s indicating that the interface between the GaAs substrate and the GaAsN layer is It has been observed that in the InP/InGaP system the formation of the MD networks does indeed happen during growth and not during the cool down after growth [8]. We believe that the same happens here, because it is expected that the thermal expansion coefficient for these dilute GaAsN layers is close to that of GaAs.…”

Section: Methodsmentioning

confidence: 59%

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

Reentilä

Lankinen

Mattila

et al. 2007

J Mater Sci: Mater Electron

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In order to investigate the possibilities of in-situ monitoring of GaAsN bulk layer growth and the crystal quality concerning the formation of misfit dislocations, GaAsN bulk samples with different layer thicknesses were grown using a metal-organic vapor phase epitaxy system equipped with a normal incidence optical reflectance setup. High-resolution X-ray diffractometry and synchrotron radiation X-ray topography were used to characterize the samples after growth. Combining the results from topography images and in-situ reflectance data, the formation of the misfit dislocations can be roughly identified from the reflectance curves and thus observed during growth.

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Resistivity and mobility in ordered InGaP grown by MOVPE

Hasenöhrl

Betko

Morvič

et al. 2004

phys. stat. sol. (c)

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A series of five ordered In x Ga 1-x P epitaxial layers with varied composition were prepared using MOVPE technique. Their electrical properties were evaluated from temperature dependent conductivity and Hall measurements using the van der Pauw method as well as from measurements of the physical and geometrical magnetoresistances in [0 -11] and [011] crystallographic directions. The magnetoresistance coefficient C was defined and was used as a parameter for the assessment of the sample inhomogenity. The ratio C [0][1][2][3][4][5][6][7][8][9][10][11] and C [011] was the criterion for the sample anisotropy. We found that ordered layers exhibit the strong dependence of transport parameters on layer composition. Samples with the lattice mismatch larger than ±2 × 10 -3 are inhomogeneous and layers slightly mismatched from the substrate at the growth temperature exhibit anisotropy of transport parameters.

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Anisotropic surface structure in ordered strained InGaP

Cited by 9 publications

References 21 publications

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

Resistivity and mobility in ordered InGaP grown by MOVPE

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