Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6 nano-scale heterostructure under external uniaxial strain

Singh, A.K.; Riyaj, Md.; Anjum, S. G.; Yadav, Nisha; Rathi, Amit; Siddiqui, M. J.; Alvi, P. A.

doi:10.1016/j.spmi.2016.08.048

Cited by 34 publications

(3 citation statements)

References 29 publications

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“…We have found some slightlycounterintuitive evidences leading us to suppose the inclusion of SO band, as a trigger for modifications of hh spectral distribution. Indeed, the k z hh , (x) oscillations range, shows an remark that a phenomenology of this sort, have been reported before for optical transitions [20,34,41,42] and luminescence processes [46,47]. Finally, we have retrieved in panels (2-V) and (2-VI), the 4 4 ( ) KL model to compare and to remark several differences.…”

Section: Qep Spectral Distribution Profilessupporting

confidence: 73%

A bandmixing treatment for multiband-coupled systems via nonlinear-eigenvalue scenario

et al. 2019

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We present a numeric-computational procedure to deal with the intricate bandmixing phenomenology in the framework of the quadratic eigenvalue problem (QEP), which is derived from a physical system described by N-coupled components Sturm-Liouville matrix boundary-equation. The modeling retrieves the generalized Schur decomposition and the root-locus-like techniques to describe the dynamics of heavy holes (hh), light holes (lh) and spin-split holes (sh) in layered semiconductor heterostructures. By exercising the extended (N = 6) Kohn Lüttinger model, our approach successfully overcomes the medium-intensity regime for quasiparticle coupling of previous theoretical studies. As a bonus, the sufficient conditions for a generalized QEP have been refined. The sh-related off -diagonal elements in the QEP mass-matrix, becomes a competitor of the bandmixing parameter, leading the hh-sh and lh-sh spectral distribution to change, then they can not be disregarded or zeroed, as was assumed in previous theoretical studies. Thereby, we unambiguously predict that several of the new features detected for hh-lh-sh spectral properties and propagating modes, become directly influenced by the metamorphosis of the effective band-offset scattering profile due sub-bandmixing effects strongly modulated with the assistance of sh, even at low-intensity mixing regime.

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Section: Qep Spectral Distribution Profilessupporting

confidence: 73%

A bandmixing treatment for multiband-coupled systems via nonlinear-eigenvalue scenario

et al. 2019

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“…[1][2][3] However, type-II heterostructures have found their utilizations in photovoltaic applications like solar cells and photodetectors. [4][5][6][7][8] In case of type-I quantum well (QW) heterostructures, electrons and holes are restricted in the identical spatial regions and so there exist a QW for electrons and a QW for holes. However, in case of type-II QW heterostructures, the alignment of interfaces occurs in a manner that either the valence band edge or the conduction band edge exists inside the other.However, there had been a significant advancement in the growth of III-nitride group built heterostructures since their possible applications in manufacturing the several electronic and the optical devices like laser diodes, LEDs, field effect transistors (FETs), tandem solar cells, and Schottky junctions.…”

mentioning

confidence: 99%

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confidence: 99%

Tunable Optical Gain Characteristics of AlN/GaN/InAlN Quantum Well Heterostructure under Uniaxial and Biaxial Pressures

Ezzeldien

Dolia

Alzaid

et al. 2022

Physica Status Solidi (b)

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In the last couple of decades, an extensive study of type-I heterostructures has been carried out and the researchers have found their applications in optoelectronic devices like light emitting diodes (LEDs), lasers, and in communication systems based on the optical fiber technology. [1][2][3] However, type-II heterostructures have found their utilizations in photovoltaic applications like solar cells and photodetectors. [4][5][6][7][8] In case of type-I quantum well (QW) heterostructures, electrons and holes are restricted in the identical spatial regions and so there exist a QW for electrons and a QW for holes. However, in case of type-II QW heterostructures, the alignment of interfaces occurs in a manner that either the valence band edge or the conduction band edge exists inside the other.However, there had been a significant advancement in the growth of III-nitride group built heterostructures since their possible applications in manufacturing the several electronic and the optical devices like laser diodes, LEDs, field effect transistors (FETs), tandem solar cells, and Schottky junctions. [9][10][11][12][13][14][15][16][17][18] III-nitride semiconductor substances include AlN, InN, GaN, and their derivatives that possess great wide bandgaps which are preferable for current optoelectronic and electronic applications. [19][20][21][22] The special abilities of III-nitrides comprise excessive dielectric breakdown voltage, significant thermal and chemical stability, extreme breakdown voltage, great saturated drift rate, wide bandgap that ranges from infrared to deep ultraviolet, etc. III-nitride semiconductors generally devise together with Wurtzite crystal arrangement that is because of the absence of inversion symmetry, and hence responsible for piezoelectric behavior in them. They emerge as the earliest semiconductor system where extended defects

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Wavefunctions and Optical Gain in $$ \text{In}_{0.3} {\text{Ga}}_{0.7} {\text{As}}/{\text{GaAs}}_{0.4} {\text{Sb}}_{0.6} $$In0.3Ga0.7As/GaAs0.4Sb0.6 Type-II Double Quantum Well Nanoheterostructure Under External Uniaxial Strain

Singh

Rathi

Riyaj

et al. 2018

Engineering Vibration, Communication and Information Processing

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Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6 nano-scale heterostructure under external uniaxial strain

Cited by 34 publications

References 29 publications

A bandmixing treatment for multiband-coupled systems via nonlinear-eigenvalue scenario

A bandmixing treatment for multiband-coupled systems via nonlinear-eigenvalue scenario

Tunable Optical Gain Characteristics of AlN/GaN/InAlN Quantum Well Heterostructure under Uniaxial and Biaxial Pressures

Wavefunctions and Optical Gain in $$ \text{In}_{0.3} {\text{Ga}}_{0.7} {\text{As}}/{\text{GaAs}}_{0.4} {\text{Sb}}_{0.6} $$In0.3Ga0.7As/GaAs0.4Sb0.6 Type-II Double Quantum Well Nanoheterostructure Under External Uniaxial Strain

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